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1.5SMC33CA-AU_R1_100A1

Description
Trans Voltage Suppressor Diode, 1500W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size128KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1.5SMC33CA-AU_R1_100A1 Overview

Trans Voltage Suppressor Diode, 1500W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

1.5SMC33CA-AU_R1_100A1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Maximum breakdown voltage34.7 V
Minimum breakdown voltage31.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
GuidelineAEC-Q101; TS 16949
Maximum repetitive peak reverse voltage28.2 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

1.5SMC33CA-AU_R1_100A1 Preview

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1.5SMC-AU SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts
BREAK DOWN VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• Glass passivated chip junction in SMC/DO-214AB package
• Excellent clamping capability
• Low zener impedance
• Fast response time: typically less than 1.0 ps from 0 volts to BV min
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed: 260°C/10 seconds/.375" ,(9.5mm)
lead length/5lbs., (2.3kg) tension
• Lead free in comply with EU RoHS 2002/95/EC directives
• Acqire quality system certificate : TS16949
• Manufactured in accordance with AECQ101
0.103(2.62)
0.079(2.00)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.128(3.25)
0.108(2.75)
6.8 to 250 Volts
• 1500W surge capability at 1.0ms
MECHANICAL DATA
• Case: JEDEC SMC/DO-214AB molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denoted cathode except Bipolar
• Mounting Position: Any
• Weight: 0.007 ounce, 0.021 gram
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.008(0.203)
0.002(0.051)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 1.5SMC6.8 thru types 1.5SMC250.
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at T
A
=25
O
C, T
P
=1ms(Note 1)
Typical Thermal Resistance Junction to Air (Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JECED Method) (Note 3)
Operating Junction and Storage Temperature Range
Symbol
P
P K
R
θ
JA
I
FSM
T
J
,T
S T G
Value
1500
50
200
-55 to +150
0.245(6.22)
0.220(5.59)
Units
Watts
O
C/W
Amps
O
C
NOTES:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2.
2. Mounted on Copper Leaf area of 0.79 in
2
(20mm
2
).
3. 8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
STAD-APR.01.2009
2
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