MCP6N16-001E/MSVAO datasheet, PDF

MCP6N16

Zero-Drift Instrumentation Amplifier

Features:

• High DC Precision:

- V

OS

: ±17 µV (maximum, G

MIN

= 100)

- TC

1

: ±60 nV/°C (maximum, G

MIN

= 100)

- CMRR: 112 dB (minimum, G

MIN

= 100,

V

DD

= 5.5V)

- PSRR: 110 dB (minimum, G

MIN

= 100,

V

DD

= 5.5V)

- g

E

: ±0.15% (maximum, G

MIN

= 10, 100)

• Flexible:

- Minimum Gain (G

MIN

) Options:

1, 10 and 100 V/V

- Rail-to-Rail Input and Output

- Gain Set by Two External Resistors

• Bandwidth: 500 kHz (typical, Gain = G

MIN

= 1, 10)

• Power Supply:

- V

DD

: 1.8V to 5.5V

- I

Q

: 1.1 mA (typical)

- Power Savings (Enable) Pin: EN

• Enhanced EMI Protection:

- Electromagnetic Interference Rejection Ratio

(EMIRR): 111 dB at 2.4 GHz

• Extended Temperature Range: -40°C to +125°C

Description:

Microchip Technology Inc. offers the single Zero-Drift

MCP6N16 instrumentation amplifier (INA) with Enable

pin (EN) and three minimum gain options (G

MIN

). The

internal offset correction gives high DC precision: it has

very low offset and offset drift, and negligible 1/f noise.

Two external resistors set the gain, minimizing gain

error and drift over temperature. The reference voltage

(V

REF

) shifts the output voltage (V

OUT

).

The MCP6N16 is designed for single-supply operation,

with rail-to-rail input (no common mode crossover

distortion) and output performance. The supply voltage

range (1.8V to 5.5V) is low enough to support many

portable applications. All devices are fully specified

from -40°C to +125°C. Each part has EMI filters at the

input pins, for good EMI rejection (EMIRR).

These parts have three minimum gain options (1, 10

and 100 V/V). This allows the user to optimize the input

offset voltage and input noise for different applications.

Typical Application Circuit

V

DD

2.49 kΩ

10 µF

EN

4.99 kΩ

RTD Temperature Sensor

Typical Applications:

•

High-Side Current Sensor

Wheatstone Bridge Sensors

Difference Amplifier with Level Shifting

Power Control Loops

MCP6N16-100

V

OUT

20 kΩ

100Ω

68.1Ω

4.99 kΩ

RTD

100Ω

Design Aids:

• SPICE Macro Model

• Microchip Advanced Part Selector (MAPS)

• Application Notes

Package Types

MCP6N16

MSOP

EN 1

V

IM

2

V

IP

3

V

SS

4

8 V

DD

7 V

OUT

6 V

FG

5 V

REF

MCP6N16

3×3 DFN *

EN 1

V

IM

2

V

IP

3

V

SS

4

EP

9

8 V

DD

7 V

OUT

6 V

FG

5 V

REF

* Includes Exposed Thermal Pad (EP); see

Table 3-1.



2014 Microchip Technology Inc.

DS20005318A-page 1

MCP6N16

Minimum Gain Options

Table 1

shows key specifications that differentiate

between the different minimum gain (G

MIN

) options.

See

Section 1.0 “Electrical Characteristics”,

Section 6.0 “Packaging Information”

and

Product

Identification System

for further information on G

MIN

.

TABLE 1:

Part No.

MCP6N16-001

MCP6N16-010

MCP6N16-100

Note 1:

KEY DIFFERENTIATING SPECIFICATIONS

G

MIN

V

OS

(V/V) (±μV)

Nom. Max.

1

10

100

85

22

17

CMRR

e

ni

TC

1

E

ni

PSRR V

DMH

GBWP

(±nV/°C)

(dB)

(μV

P-P

)

(nV/√Hz)

(dB)

(V)

(MHz)

Max.

Min.

Typ.

Min. Min.

Typ.

T

A

= -40 to +125°C V

DD

= 5.5V

f = 0.1 to 10 Hz f < 500 Hz

1800

180

60

89

103

112

91

104

110

2.7

0.27

0.027

0.50

5.0

35

19

2.2

0.93

900

105

45

G

MIN

is the minimum stable gain (G

DM

), for a given part option. In other words, G

DM

≥

G

MIN

.

4

3

Input Offset V

O

Voltage (µV)

e

Figures 1

to

3

show input offset voltage versus

temperature for the three gain options (G

MIN

= 1, 10,

100 V/V).

40

30

2

1

0

-1

-2

-3

G

MIN

= 100

28 Samples

V

DD

= 5.5V

5 5V

V

CM

= V

DD

/2

NPBW = 3 mHz

Input Offset Voltage (µV)

O

20

10

0

-10

0

-20

-30

-40

-50

-25

0

25

50

75

Ambient Temperature (°C)

100

125

G

MIN

= 1

28 Samples

V

DD

= 5.5V

V

CM

= V

DD

/2

NPBW = 3 mHz

-4

4

-50

-25

0

25

50

75

Ambient Temperature (°C)

100

125

FIGURE 3:

Input Offset Voltage vs.

Temperature, with G

MIN

= 100.

FIGURE 1:

Input Offset Voltage vs.

Temperature, with G

MIN

= 1.

4

3

Input Offset V

O

Voltage (µV)

e

2

1

0

-1

-2

-3

-4

4

-50

-25

0

25

50

75

Ambient Temperature (°C)

100

125

G

MIN

= 10

28 Samples

V

DD

= 5 5V

5.5V

V

CM

= V

DD

/2

NPBW = 3 mHz

FIGURE 2:

Input Offset Voltage vs.

Temperature, with G

MIN

= 10.

DS20005318A-page 2



2014 Microchip Technology Inc.

1.0

1.1

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †



2014 Microchip Technology Inc.

DS20005318A-page 3

V

DD

– V

SS

............................................................................................................................................................................................................................................ 6.5V

Current at Input Pins

(Note

1)

........................................................................................................................................................................................................... ±2 mA

Analog Inputs (V

IP

and V

IM

)

(Note

1)

.................................................................................................................................................................. V

SS

– 1.0V to V

DD

+ 1.0V

All Other Inputs and Outputs ............................................................................................................................................................................... V

SS

– 0.3V to V

DD

+ 0.3V

Difference Input Voltage ............................................................................................................................................................................................................. |V

DD

– V

SS

|

Output Short-Circuit Current ...................................................................................................................................................................................................... Continuous

Current at Output and Supply Pins .................................................................................................................................................................................................. ±30 mA

Storage Temperature ......................................................................................................................................................................................................... -65°C to +150°C

Maximum Junction Temperature ......................................................................................................................................................................................................+150°C

ESD protection on all pins (HBM, MM).....................................................................................................................................................................................

≥

4 kV, 400V

† Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum

rating conditions for extended periods may affect device reliability.

Note 1:

See

Section 4.3.1.2 “Input Voltage Limits”

and

Section 4.3.1.3 “Input Current Limits”.

MCP6N16

1.2

Specifications

DC ELECTRICAL SPECIFICATIONS

DS20005318A-page 4



2014 Microchip Technology Inc.

MCP6N16

TABLE 1-1:

Electrical Characteristics:

Unless otherwise indicated, T

A

= +25°C, V

DD

= 1.8V to 5.5V, V

SS

= GND, V

CM

= V

DD

/2, V

DM

= 0V, V

REF

= V

DD

/2, V

L

= V

DD

/2, R

L

= 10 kΩ

to V

L

, G

DM

= G

MIN

and EN = V

DD

; see

Figures 1-7

and

1-8

(Note

1).

Parameters

Input Offset

Input Offset Voltage

V

OS

-85

-22

-17

Input Offset Voltage Drift –

Linear Temp. Co.

Input Offset Voltage Drift –

Quadratic Temp. Co.

Input Offset Aging

TC

1

-1800

-180

-60

TC

2

—

∆V

OS

—

Power Supply Rejection Ratio

PSRR

91

104

110

Output Offset

Output Offset Voltage

Input Current and Impedance (Note

3)

Input Bias Current

Across Temperature

Note 1:

2:

3:

4:

5:

6:

I

B

-100

—

0

±2

20

250

+100

—

2000

pA

all

T

A

= +85°C

T

A

= +125°C

V

OSO

0

µV

all

—

±560

±63

±69

±1.0

±0.8

±0.7

109

122

128

+85

+22

+17

+1800

+180

+60

—

dB

µV

pV/°C

2

nV/°C

µV

1

10

100

1

10

100

1

10

100

1

10

100

1

10

100

408 hr Life Test at +150°C,

measured at +25°C

T

A

= -40°C to +125°C

T

A

= -40°C to +125°C

(Note

2)

T

A

= +25°C

Sym.

Min.

Typ.

Max.

Units

G

MIN

Conditions

V

CM

= (V

IP

+ V

IM

)/2, V

DM

= (V

IP

– V

IM

) and G

DM

= 1 + R

F

/R

G

.

For Design Guidance only; not tested.

These specifications apply to the V

IP

, V

IM

input pair (use V

CM

) and to the V

REF

, V

FG

input pair (use V

REF

instead).

This specification applies to the V

IP

, V

IM

, V

REF

and V

FG

pins individually.

Figures 2-52

and

2-53

show the V

IVL

, V

IVH

, V

DML

and V

DMH

variation over temperature.

See

Section 1.5 “Explanation of DC Error Specifications”.

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS (CONTINUED)



2014 Microchip Technology Inc.

DS20005318A-page 5

Electrical Characteristics:

Unless otherwise indicated, T

A

= +25°C, V

DD

= 1.8V to 5.5V, V

SS

= GND, V

CM

= V

DD

/2, V

DM

= 0V, V

REF

= V

DD

/2, V

L

= V

DD

/2, R

L

= 10 kΩ

to V

L

, G

DM

= G

MIN

and EN = V

DD

; see

Figures 1-7

and

1-8

(Note

1).

Parameters

Input Offset Current

Across Temperature

Common Mode Input Impedance

Differential Input Impedance

Input Voltage Range

(Note

4, Note 5)

Common Mode Rejection Ratio

Z

CM

Z

DIFF

V

IVL

V

IVH

CMRR

Sym.

I

OS

Min.

-800

—

-1500

—

V

DD

+ 0.15

80

94

103

89

103

112

Common Mode Rejection Ratio at V

REF

CMRR2

83

98

102

94

109

115

Note 1:

2:

3:

4:

5:

6:

Typ.

±300

±320

±350

10

13

||10

10

13

||4

V

SS

– 0.25

V

DD

+ 0.30

98

112

121

107

121

130

101

116

120

112

127

133

Max.

+800

—

+1500

—

V

SS

– 0.15

—

dB

1

10

100

1

10

100

1

10

100

1

10

100

V

REF

= 0.2V to V

DD

– 0.2V,

V

DD

= 5.5V

V

REF

= 0.2V to V

DD

– 0.2V,

V

DD

= 1.8V

V

CM

= V

IVL

to V

IVH

, V

DD

= 5.5V

V

CM

= V

IVL

to V

IVH

, V

DD

= 1.8V

V

all

Ω||pF

Units

pA

G

MIN

all

T

A

= +85°C

T

A

= +125°C

Conditions

Input Common Mode Voltage (V

CM

or V

REF

) (Note

3)

V

CM

= (V

IP

+ V

IM

)/2, V

DM

= (V

IP

– V

IM

) and G

DM

= 1 + R

F

/R

G

.

For Design Guidance only; not tested.

These specifications apply to the V

IP

, V

IM

input pair (use V

CM

) and to the V

REF

, V

FG

input pair (use V

REF

instead).

This specification applies to the V

IP

, V

IM

, V

REF

and V

FG

pins individually.

Figures 2-52

and

2-53

show the V

IVL

, V

IVH

, V

DML

and V

DMH

variation over temperature.

See

Section 1.5 “Explanation of DC Error Specifications”.

MCP6N16

Parameter Name	Attribute value
category	semiconductor;Amplifier IC
Maker	Microchip
series	Automotive, AEC-Q100
Package	Pipe fittings
Amplifier type	meter
Number of circuits	1
Output type	Full range
Slew rate	-
gain bandwidth product	500 kHz
Current - Input Bias	2 pA
Voltage - Input Compensation	85 µV
Current - power supply	1.1mA
Current - Output/Channel	10 mA
Voltage - Span (minimum)	1.8 V
Voltage - Span (maximum)	5.5 V
Operating temperature	-40°C ~ 125°C
Installation type	surface mount type
Package/casing	8-TSSOP, 8-MSOP (0.118", 3.00mm wide)
Supplier device packaging	8-MSOP
Basic product number	MCP6N16

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