Part Number |
Manufacturer |
Description |
Datasheet |
1-2199298-2 |
TE Connectivity |
Number of pins: 8 Pitch: 0.100" (2.54mm) Type: DIP Socket for IC, transistor 8 (2 x 4) positions |
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|
1C326000AB0AR |
Daishinku Corp. |
Equivalent series resistance (ESR): 120Ω Main frequency: 26MHz Frequency tolerance: ±7ppm Load capacitance: 19pF SMD crystal (passive) |
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1MAA19200ACA |
Daishinku Corp. |
Equivalent series resistance (ESR): 80Ω Main frequency: 19.2MHz Frequency tolerance: ±10ppm Load capacitance: 7pF With thermal chip crystal (passive) |
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1ZCB26000LB0B |
Daishinku Corp. |
Equivalent series resistance (ESR): 120Ω Main frequency: 26MHz Frequency tolerance: ±7ppm Load capacitance: 19pF SMD crystal (passive) |
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277LF-40-18 |
FOX [Fox Electronics] |
Crystal 40MHz 20ppm 18pF -40C +85C |
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278-24.8832-3SA2I8 |
IDT (Integrated Device Technology, Inc.) |
Crystal 24.8832 MHz 20 Ohms 20 PPM 7pF 10pF |
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2911139 |
PHOENIX CONTACT |
Transistor output photocoupler st-oe3 24dc/24dc/500 |
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2CA1943 |
JCET |
PNP transistor |
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2DA1774R-7-F |
Diodes |
Rated power: 150mW Collector current Ic: 150mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP PNP, Vceo=-50V, Ic=150mA |
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2DA1971Q-7 |
Diodes Incorporated |
Bipolar Transistor - Bipolar Junction Transistor (BJT) Pwr Hi Voltage Transistor SOT89 T&R 1K |
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2DB1188Q-13 |
Diodes |
Rated power: 1W Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 32V Transistor type: PNP PNP, 32V, 2A |
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2DB1188R-13 |
Diodes |
Rated power: 1W Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 32V Transistor type: PNP |
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2DB1694-7 |
Diodes |
Rated power: 300mW Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 30V Transistor type: PNP PNP, Vceo=-30V, Ic=-1A |
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2DB1714-13 |
Diodes |
Rated power: 900mW Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 30V Transistor type: PNP |
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2DD1664R-13 |
Diodes |
Rated power: 1W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 32V Transistor type: NPN TRANSNPN32V1ASOT89-3 |
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|
2N2060L/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2218AL/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2219Ae3 |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2219Ae3/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2219Ae4/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2221AUA/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2222A |
SEMTECH ELECTRONICS LTD. |
Rated power: 625mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 30V Transistor type: NPN |
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|
2N2222A |
STMicroelectronics |
NPN transistor model: 2N2222, V=30V, I=800MA, package: TO18 |
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2N2222A |
Foshan Blue Rocket Electronics Co.,Ltd. |
Rated power: 625mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN |
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2N2222Ae3/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2222Ae4/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2222AL/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2222A/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2222AUA/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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2N2222AUB/TR |
Microsemi |
Bipolar Transistor - Bipolar Junction Transistor (BJT) |
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