219GHz0135LmCMOS Low Noise Amplifier

JasonYoo

219GHz0135LmCMOS Low Noise Amplifier [Copy link]

With the continuous reduction of feature size, the characteristic frequency of MOSFET in deep submicron CMOS process has reached more than 50GHz, making it possible to realize high-frequency analog integrated circuits in the GHz band
using CMOS process. More and more RF engineers are beginning to use advanced CMOS process to design RF integrated circuits. This paper presents a 219GHz monolithic low-noise amplifier realized using 0135LmCMOS process. The amplifier uses spiral inductors integrated on the chip to achieve low noise and monolithic integration. Under a 3V power supply, the operating current is 8mA, the power gain is greater than 10dB, and the input reflection is less than -12dB.