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2N5796

Description
Bipolar Transistors - BJT Small-Signal BJT
CategoryDiscrete semiconductor    The transistor   
File Size123KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N5796 Overview

Bipolar Transistors - BJT Small-Signal BJT

2N5796 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W8
JESD-609 codee0
Number of components2
Number of terminals8
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)140 ns
Maximum opening time (tons)50 ns
Base Number Matches1

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Description Bipolar Transistors - BJT Small-Signal BJT Bipolar Transistors - BJT PNP Dual Transistors Bipolar Transistors - BJT Small-Signal BJT Bipolar Transistors - BJT Small-Signal BJT Bipolar Transistors - BJT Small-Signal BJT Bipolar Transistors - BJT PNP Dual Transistors
package instruction CYLINDRICAL, O-MBCY-W8 , CYLINDRICAL, O-MBCY-W8 CHIP CARRIER, R-CDCC-N6 CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
Minimum DC current gain (hFE) 100 40 40 50 40 40
Maximum operating temperature 200 °C 175 °C 200 °C 175 °C 175 °C 175 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP
surface mount NO NO NO YES NO NO
Base Number Matches 1 1 1 1 1 1
Is it lead-free? Contains lead - Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Collector-emitter maximum voltage 60 V - 60 V 60 V 60 V 60 V
Configuration SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
JEDEC-95 code TO-78 - TO-78 TO-78 TO-78 TO-78
JESD-30 code O-MBCY-W8 - O-MBCY-W8 R-CDCC-N6 O-MBCY-W8 O-MBCY-W8
JESD-609 code e0 - e0 e0 e0 e0
Number of components 2 - 2 2 2 2
Number of terminals 8 - 8 6 8 8
Package body material METAL - METAL CERAMIC, METAL-SEALED COFIRED METAL METAL
Package shape ROUND - ROUND RECTANGULAR ROUND ROUND
Package form CYLINDRICAL - CYLINDRICAL CHIP CARRIER CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - Not Qualified Not Qualified Qualified Qualified
Terminal surface TIN LEAD - TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE - WIRE NO LEAD WIRE WIRE
Terminal location BOTTOM - BOTTOM DUAL BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Maximum off time (toff) 140 ns - 140 ns 140 ns 140 ns 140 ns
Maximum opening time (tons) 50 ns - 50 ns 50 ns 50 ns 50 ns

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