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IRFR2905ZPBF

Description
MOSFET 60V 2.3A 2watt AEC-Q101 Qualified
CategoryDiscrete semiconductor    The transistor   
File Size334KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFR2905ZPBF Overview

MOSFET 60V 2.3A 2watt AEC-Q101 Qualified

IRFR2905ZPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionLEAD FREE, PLASTIC, DPAK-3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)82 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)59 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.0145 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95943B
IRFR2905ZPbF
IRFU2905ZPbF
Features
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 14.5mΩ
G
S
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
I
D
= 42A
D-Pak
IRFR2905ZPbF
I-Pak
IRFU2905ZPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
Pulsed Drain Current
I
DM
Max.
59
42
42
240
110
Units
A
™
@ 10V
(Package Limited)
P
D
@T
C
= 25°C Power Dissipation
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
0.72
± 20
Single Pulse Avalanche Energy Tested Value
Ù
h
55
82
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.38
40
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
09/16/10

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