CD00043021
Rev 3.1
IN APPROVAL
PAGE A
Turbo 2 ultrafast high voltage rectifier
Technical Literature
Alternate Identifier(s)
Key process
ISO Definition
Confidentiality Level
-D
Document Category
aft
Document Type
Original ID
Original Repository
Status
Responsible
Keywords
IN APPROVAL
Caramanna Marcello
Technical Literature, 10764, Product Development,
Specification, Datasheet, STTH60L06,
NOTICE: This document may have been revised since it was printed. Check Document Control System for latest version before using or copying.
© Copyright STMicroelectronics. Unauthorized reproduction and communication strictly prohibited.
Dr
Document Family
ra
ft -
10764
Public
CUSTOM ATTRIBUTES
Product Development
Specification
Technical Literature
Datasheet
Dr
aft
DOCUMENT HISTORY
Version
Rev 3.1
Release Date
Change Qualifier
Properties Changes
08/07/2014 AUTOMATIC REVALIDATION DATE WORKFLOW STARTED
Dr
aft
-D
ra
ft -
Dr
aft
CD00043021
Rev 3.1
IN APPROVAL
PAGE C
DOCUMENT APPROVAL
LABEL
Donohoo Sean Michael
USER FUNCTION
Document Controller
DATE
17-Apr-2015
NOTICE: This document may have been revised since it was printed. Check Document Control System for latest version before using or copying.
© Copyright STMicroelectronics. Unauthorized reproduction and communication strictly prohibited.
Dr
aft
-D
ra
ft -
Dr
aft
Document CD00043021
Revision
3.1
IN APPROVAL
4
/ 11
STTH60L06
Turbo 2 ultrafast high voltage rectifier
Features and benefits
■
■
■
■
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
A
K
Description
The STTH60L06, which is using ST Turbo 2
600 V technology, is specially suited for use in
switching power supplies, and industrial
applications, as rectification and discontinuous
mode PFC boost diode. Thanks to its low V
F
characteristics, this device exhibits high
performances in free-wheeling applications.
Table 1.
ra
ft -
Dr
Symbol
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
t
rr
(max)
aft
DO-247
STTH60L06W
Device summary
Value
60 A
600 V
175 °C
0.95 V
70 ns
September 2011
Dr
aft
Doc ID 10764 Rev 3
-D
1/8
www.st.com
8
Copyright STMicroelectronics
Company Internal
Unauthorized reproduction and communication strictly prohibited
Document CD00043021
Characteristics
Revision
3.1
IN APPROVAL
STTH60L06
5
/ 11
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ
= 0.5
T
c
= 110 °C
t
p
= 10 ms sinusoidal
Value
600
90
60
600
-65 to + 175
175
Unit
V
A
A
A
°C
°C
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Symbol
R
th(j-c)
Junction to case
Parameter
aft
Dr
Min.
V
R
= V
RRM
I
F
= 60 A
Table 3.
Thermal parameter
Value (max)
0.75
Unit
°C/W
Table 4.
Symbol
I
R (1)
V
F (2)
Static electrical characteristics
Parameter
Reverse leakage
current
Forward voltage drop
T
j
= 25 °C
ra
ft -
Test conditions
Typ.
Max.
50
Unit
µA
T
j
= 150 °C
T
j
= 25 °C
160
1600
1.55
V
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
2/8
Copyright STMicroelectronics
Dr
aft
To evaluate the maximum conduction losses use the following equation:
P = 0.93 x I
F(AV)
+ 0.0045 I
F2(RMS)
-D
T
j
= 150 °C
0.95
1.2
Doc ID 10764 Rev 3
Company Internal
Unauthorized reproduction and communication strictly prohibited