DCX69/-16/-25
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.055 grams (approximate)
SOT89
COLLECTOR
2,4
3
C
4
2
E
C
1
BASE
3
EMITTER
1
B
Top View
Device Schematic
Top View
Pin Out Configuration
Ordering Information
(Note 3)
Part Number
DCX69-13
DCX69-16-13
DCX69-25TA
DCX69-25-13
Notes:
Case
SOT89
SOT89
SOT89
SOT89
Packaging
2500/Tape & Reel
2500/Tape & Reel
1000/Tape & Reel
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
xxx = Product Type Marking Code:
P12 = DCX69
P12-16 = DCX69-16
P12-25 = DCX69-25
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
YWW
xxx
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
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April 2012
© Diodes Incorporated
DCX69/-16/-25
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Power
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-25
-20
-5.0
-1.0
-2.0
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air @ T
A
= 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DCX69, DCX69-16, DCX69-25
DC Current Gain
DCX69
DCX69-16
DCX69-25
h
FE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-25
-20
-5.0
⎯
⎯
50
60
85
100
160
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
200
17
Max
⎯
⎯
⎯
-100
-10
-100
⎯
⎯
375
250
375
-0.5
-0.7
-1.0
⎯
⎯
Unit
V
V
V
nA
μA
nA
⎯
⎯
⎯
⎯
⎯
V
V
Test Conditions
I
C
= -100μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -25V, I
E
= 0
V
CB
= -25V, I
E
= 0, T
A
= 150°C
V
EB
= -5.0V, I
C
= 0
V
CE
= -10V, I
C
= -5.0mA
V
CE
= -1.0V, I
C
= -1.0A
V
CE
= -1.0V, I
C
= -500mA
V
CE
= -1.0V, I
C
= -500mA
V
CE
= -1.0V, I
C
= -500mA
I
C
= -1.0A, I
B
= -100mA
V
CE
= -10V, I
C
= -5mA
V
CE
= -1.0V, I
C
= -500mA
V
CE
= -5.0V, I
C
= -50mA,
f = 100MHz
V
CB
= -10V, f = 1MHz
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes:
V
CE(SAT)
V
BE(ON)
f
T
C
obo
40
⎯
MHz
pF
4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
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www.diodes.com
April 2012
© Diodes Incorporated
DCX69/-16/-25
1.0
1.8
1.6
P
D
, POWER DISSIPATION (mW)
0.8
-I
C
, COLLECTOR CURRENT (A)
1.4
1.2
1.0
I
B
= -10mA
I
B
= -8mA
0.6
I
B
= -6mA
0.4
0.8
0.6
0.4
I
B
= -2mA
I
B
= -4mA
0.2
0.2
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 4)
150
0
0
1
2
3
4
5
6
7
8
9 10
-V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
350
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.6
V
CE
= -1V
T
A
= 150°C
I
C
/I
B
= 10
300
h
FE
, DC CURRENT GAIN
250
T
A
= 85°C
0.5
0.4
200
150
100
T
A
= -55°C
T
A
= 25°C
0.3
0.2
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
50
0
0.001
0.1
0
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain
vs. Collector Current (DCX69-16)
10
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.0
-V
BE(SAT)
, BASE-EMITTER
SATURATION VOLTAGE (V)
1.2
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.4
0.4
T
A
= 150°C
0.2
V
CE
= -1V
0.2
I
C
/I
B
= 10
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
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April 2012
© Diodes Incorporated
DCX69/-16/-25
60
C
OBO
, OUTPUT CAPACITANCE (pF)
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
250
50
f = 1MHz
200
40
150
30
100
20
10
50
V
CE
= -5V
f = 100MHz
0
0.01
0
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
20
40
60
80
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
Package Outline Dimensions
.
R0
20
0
D1
C
E
H
B
B1
e1
8°
(4 X
)
L
e
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1
1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
D
Suggested Pad Layout
X1
X2 (2x)
Y1
Y3
Y
Y2
C
X (3x)
Y4
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
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© Diodes Incorporated
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
5 of 5
www.diodes.com
April 2012
© Diodes Incorporated