BSC090N03LS G
OptiMOS™3
Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC090N03LS G
Package
PG-TDSON-8
Marking
090N03LS
Product Summary
V
DS
R
DS(on),max
I
D
30
9
48
PG-TDSON-8
V
mW
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
I
D,pulse
I
AS
E
AS
T
C
=25 °C
T
C
=25 °C
I
D
=35 A,
R
GS
=25
W
I
D
=48 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
48
30
39
25
Unit
A
13
192
40
10
mJ
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
1)
V
GS
±20
V
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17
BSC090N03LS G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
32
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
3.9
20
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
2)
30
1
-
-
-
0.1
-
2.2
1
V
µA
-
-
-
-
0.5
10
10
10.6
7.5
1.0
56
100
100
13.3
9
1.8
-
W
S
nA
mW
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
28
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.1
page 2
2013-05-17
BSC090N03LS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
3.7
1.7
1.6
3.6
6.7
3.4
14
4.9
2.3
2.7
5.3
8.9
-
18
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
1100
460
22
3.1
2.6
14
2.4
1500
610
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
6
12
7.7
16
nC
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.89
29
192
1.1
A
V
Reverse recovery charge
4)
5)
Q
rr
-
-
10
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-17
BSC090N03LS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
35
50
30
40
25
30
P
tot
[W]
20
15
I
D
[A]
20
10
10
5
0
0
40
80
120
160
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10
2
10 µs
0.5
1
100 µs
DC
0.2
0.1
0.05
0.02
0.01
10
1
1 ms
Z
thJC
[K/W]
0.1
I
D
[A]
10
0
10 ms
single pulse
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2013-05-17
BSC090N03LS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
24
10 V
5V
3.2 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
150
20
R
DS(on)
[mW]
16
3.5 V
4V
I
D
[A]
100
4.5 V
12
4.5 V
5V
4V
8
10 V
11.5 V
50
3.5 V
3.2 V
3V
4
0
0
1
2
2.8 V
0
3
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
120
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
140
100
120
100
80
80
60
g
fs
[S]
150 °C
25 °C
I
D
[A]
60
40
40
20
20
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2013-05-17
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