VS-UFB230FA60
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 230 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
V
R
I
F(AV)
per module at T
C
= 88 °C
t
rr
Type
Package
600 V
230 A
43 ns
Modules - Diode FRED Pt
®
SOT-227
The VS-UFB230FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F (1)
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 85 °C
T
C
= 25 °C
T
C
= 85 °C
Any terminal to case, t = 1 minute
TEST CONDITIONS
MAX.
600
141
1400
416
2500
-55 to +175
UNITS
V
A
W
V
°C
Note
(1)
Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
Revision: 26-Sep-17
Document Number: 93641
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB230FA60
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 100 A
Forward voltage
V
FM
I
F
= 100 A, T
J
= 125 °C
I
F
= 200 A
I
F
= 200 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.46
1.23
1.70
1.50
0.1
0.30
77
MAX.
-
1.78
1.52
2.05
1.78
50
2
-
μA
mA
pF
V
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
43
83
182
7
18
290
1595
MAX.
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
Weight
Mounting torque
Case style
Torque to terminal
Torque to heatsink
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
-
-
0.05
30
-
-
MAX.
0.43
0.215
-
-
1.1 (9.7)
1.8 (15.9)
SOT-227
g
Nm (lbf.in)
Nm (lbf.in)
°C/W
UNITS
Revision: 26-Sep-17
Document Number: 93641
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB230FA60
www.vishay.com
Vishay Semiconductors
1000
T
J
= 175 °C
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
T
J
= 25 °C
0.01
0.001
100
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1
1.5
2
2.5
0
93641_02
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
100
10
10
93641_03
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
DC
0.01
0.0001
0.001
0.01
0.1
1
10
93641_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 26-Sep-17
Document Number: 93641
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB230FA60
www.vishay.com
175
250
V
R
= 200 V
150
125
200
I
F
= 50 A, 125 °C
150
Vishay Semiconductors
Allowable Case Temperature (°C)
DC
75
50
25
0
0
40
80
120
160
200
240
280
Square
wave (D = 0.50)
80 % Rated V
R
applied
t
rr
(ns)
100
100
I
F
= 50 A, 25 °C
50
100
93641_07
1000
93641_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
500
3500
V
R
= 200 V
3000
Average Power Loss (W)
400
RMS Limit
2500
Q
rr
(nC)
300
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
2000
1500
1000
500
0
100
I
F
= 50 A, T
J
= 125 °C
200
100
I
F
= 50 A, T
J
= 25 °C
0
0
93641_06
40
80
120
160
200
240
280
1000
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
93641_08
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
40
V
R
= 200 V
30
I
F
= 50 A, 125 °C
I
rr
(A)
20
I
F
= 50 A, 25 °C
10
0
100
93641_09
1000
dI
F
/dt (A/μs)
Fig. 9 - Typical I
rr
Diode vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 26-Sep-17
Document Number: 93641
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB230FA60
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 26-Sep-17
Document Number: 93641
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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