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MPSW63

Description
One Watt Darlington Transistors
CategoryDiscrete semiconductor    The transistor   
File Size156KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MPSW63 Overview

One Watt Darlington Transistors

MPSW63 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
JEDEC-95 codeTO-226AE
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
VCEsat-Max1.5 V

MPSW63 Related Products

MPSW63 MPSW64
Description One Watt Darlington Transistors One Watt Darlington Transistors
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.5 A 0.5 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 10000 20000
JEDEC-95 code TO-226AE TO-226AE
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Maximum power consumption environment 2.5 W 2.5 W
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz
VCEsat-Max 1.5 V 1.5 V
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