Freescale Semiconductor
Technical Data
Document Number: MRF7S27130H
Rev. 2, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ
= 1500 mA,
P
out
= 23 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 16.5 dB
Drain Efficiency — 20%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — --49 dBc in 0.5 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
MRF7S27130HR3
MRF7S27130HSR3
2500-
-2700 MHz, 23 W AVG., 28 V
WiMAX
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465-
-06, STYLE 1
NI-
-780
MRF7S27130HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF7S27130HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
150
0.83
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
Symbol
R
θJC
Value
(2,3)
0.32
0.36
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2007--2008, 2011. All rights reserved.
MRF7S27130HR3 MRF7S27130HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 348
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1500 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.4 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
10.4
711
326
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4
0.1
2
2.7
5.4
0.24
2.7
—
7
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 23 W Avg., f = 2700 MHz,
WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 0.5 MHz Channel Bandwidth @
±5.25
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
15
18
7.5
—
—
16.5
20
8.2
--49
--8
18.5
23
—
--46
--5
dB
%
dB
dBc
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S27130HR3 MRF7S27130HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 23 W Avg.,
f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single--Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 23 W Avg.
Mask
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
RCE
EVM
—
—
—
—
—
—
—
--27
--40
--44
--60
--60
--33
2.2
—
—
—
—
—
—
—
dB
% rms
dBc
Relative Constellation Error @ P
out
= 23 W Avg.
(1)
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 23 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, 2500--2700 MHz Bandwidth
Video Bandwidth @ 105 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 200 MHz Bandwidth @ P
out
= 23 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 105 W CW
Average Group Delay @ P
out
= 105 W CW, f = 2600 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 105 W CW,
f = 2600 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
1. RCE = 20Log(EVM/100)
VBW
—
40
—
MHz
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
1.2
135
1.5
81.3
0.013
0.01
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dB/°C
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
R1
R2
R3
Z18
V
SUPPLY
+
C3
Z17
Z9
C4
C6
C7
C8
C12
C2
RF
INPUT
Z1
Z2
Z3
C1
Z4
Z5
Z6
Z7
Z8
Z10
Z11
Z12
Z13
C13
Z14
Z15
RF
Z16 OUTPUT
DUT
Z19
C5
C10
C11
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.320″ x 0.084″ Microstrip
0.380″ x 0.240″ Microstrip
0.046″ x 0.084″ Microstrip
0.273″ x 0.084″ Microstrip
0.360″ x 0.600″ Microstrip
0.260″ x 0.394″ Microstrip
0.145″ x 0.922″ Microstrip
0.455″ x 0.922″ Microstrip
0.106″ x 0.716″ Microstrip
0.413″ x 0.716″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17*
Z18, Z19*
PCB
0.251″ x 0.084″ Microstrip
0.160″ x 0.162″ Microstrip
0.566″ x 0.084″ Microstrip
0.059″ x 0.084″ Microstrip
0.080″ x 0.123″ Microstrip
0.583″ x 0.084″ Microstrip
0.950″ x 0.100″ Microstrip
0.560″ x 0.100″ Microstrip
Taconic TLX8--0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF7S27130HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S27130HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2, C6, C7, C8, C9, C10, C11
C3
C4, C5
C12
C13
R1, R2
R3
Description
2 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
3 pF Chip Capacitor
3.6 pF Chip Capacitors
470
μF,
63 V Electrolytic Capacitor, Radial
5.6 pF Chip Capacitor
2 KΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B2R0BT500XT
C5750X5R1H106M
ATC100B3R0BT500XT
ATC100B3R6BT500XT
EKME630ELL471MK255
ATC100B5R6BT500XT
CRCW12062001FKEA
CRCW120610R1FKEA
Manufacturer
ATC
TDK
ATC
ATC
Multicomp
ATC
Vishay
Vishay
MRF7S27130HR3 MRF7S27130HSR3
4
RF Device Data
Freescale Semiconductor
C6
V
GS
R1
R3
R2
C2
C3
C7
C8
V
DD
C12
C4
CUT OUT AREA
C1
C13
C11
C5
C9
C10
MRF7S27130H/HS
Rev. 0
Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
EEWORLD
