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APTGF30H60T3G

Description
IGBT Modules Power Module - IGBT
CategoryDiscrete semiconductor    The transistor   
File Size528KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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IGBT Modules Power Module - IGBT

APTGF30H60T3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X25
Contacts25
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)42 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X25
JESD-609 codee1
Humidity sensitivity level1
Number of components4
Number of terminals25
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)111 ns
Nominal on time (ton)44 ns

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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