2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAFX75N10A
Features
•
•
•
•
•
•
•
Ultrafast body diode
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
100 Volts
75 Amps
20 mΩ
Ω
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
°
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T
J
≥
25°C
SYMBOL
BV
DSS
BV
DGR
V
GS
V
GSM
I
D25
I
D100
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
j
T
stg
I
S
I
SM
θ
JC
MAX.
100
100
+/-20
+/-30
75
60
300
75
30
tbd
5.0
300
-55 to +150
-55 to +150
75
300
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
Drain-to-Gate Breakdown Voltage
@ T
J
≥
25°C, R
GS
= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
100°C
Tj= 25°C
Tj=
Peak Drain Current, pulse width limited by T
Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
, T
J
≤
150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0301A
MSAFX75N10A
Electrical Parameters @ 25°C (unless otherwise specified)
°
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
SYMBOL
BV
DSS
∆BV
DSS
/∆T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
CONDITIONS
V
GS
= 0 V, I
D
= 250
µA
MIN
100
TYP.
tbd
MAX
UNIT
V
V/°C
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
V
SD
t
rr
Q
rr
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±
20V
DC
, V
DS
= 0 T
J
= 25°C
T
J
= 125°C
V
DS
=0.8•BV
DSS
T
J
= 25°C
V
GS
= 0 V
T
J
= 125°C
V
GS
= 10V, I
D
= 37.5A
T
J
= 25°C
I
D
= 75A
T
J
= 25°C
I
D
= 37.5A
T
J
= 125°C
V
DS
≥
10 V; I
D
= 75 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2.0
4.0
±100
±200
200
1000
0.02
0.02
0.035
30
4500
1600
800
20
60
80
60
180
36
85
V
nA
µA
Ω
25
S
pF
V
GS
= 10 V, V
DS
= 50 V,
I
D
= 37.5 A, R
G
= 2.00
Ω
V
GS
= 10 V, V
DS
= 50V, I
D
= 37.5A
I
F
= I
S
, V
GS
= 0 V
I
F
= 10 A,
-di/dt = 100 A/
µs,
I
F
= 10 A,
di/dt = 100 A/
µs,
25 C
125 C
25 C
125 C
30
110
110
90
260
70
160
1.75
200
300
ns
nC
V
ns
µC
tbd
tbd
Notes
(1)
(2)
Pulse test, t
≤
300
µ
s, duty cycle
δ ≤
2%
Microsemi Corp. does not manufacture the mosfet die; contact company for details.
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