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MUR20005CT

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size97KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MUR20005CT Overview

RECTIFIER DIODE

MUR20005CT Parametric

Parameter NameAttribute value
stateACTIVE
Diode typerectifier diode
MCC
Features
  omponents
21201 Itasca Street Chatsworth

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MUR20005CT
THRU
MUR20060CT
200
Amp
Supre Fast
Recovery
Rectifier
50 to
600
Volts
FULL PACK
Supre Fast switching for high efficiency
High Surge Capability
Low Leakage
Low Forward Voltage Drop
High Current Capability
Maximum Ratings
Operating Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
I
F(AV)
I
FSM
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
T
C
=
135°C
MCC
Part Number
MUR20005CT
MUR20010CT
MUR20020CT
MUR20040CT
MUR20060CT
Maximum
RMS Voltage
35V
70V
40V
280V
420V
200
A
800A
A
B
K
C
M
J
F
D
H
E
L
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
20005CT-20020CT
20040CT-20060CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
G
8.3ms, half sine
DIMENSIONS
V
F
1.25V
1.75V
I
FM
=
100.0A;
T
J
= 25°C
I
R
50 µA
T
J
= 25°C
6
mA
T
J
=
125°C
Maximum Reverse
Recovery Time
20005CT-20020CT
20040CT
20060CT
Typical Junction
Capacitance
20005CT-20020CT
20040CT
20060CT
DIM
A
B
C
D
E
F
G
H
J
K
L
M
INCH ES
MIN
MAX
3.150
NOM
1.565
1.585
.700
.800
2.400
2.500
.119
.132
1.375 REF
3.550
3.650
.580
.620
1/4 -20 UNF
.380
.410
.185
.195
.275
.295
MM
MIN
MAX
80.01
NOM
39.75
40.26
17.78
20.32
60.96
63.50
3.02
3.35
34.92 REF
90.17
92.71
14.73
15.75
FULL
9.65
10.41
4.70
4.95
6.99
7.49
NOTE
T
rr
60ns
75ns
90ns
575pF
300pF
275pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
C
J
Measured at
1.0MHz, V
R
=10V
*Pulse Test: Pulse Width 300µsec, Duty Cycle
2%
www.mccsemi.com

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