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NAND01GR3A2BZA1F

Description
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage    storage   
File Size398KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND01GR3A2BZA1F Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

NAND01GR3A2BZA1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionBGA,
Contacts63
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time15000 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee1
memory density1073741824 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals63
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperature30

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