NAND01GW4A0BV6E datasheet, PDF

NAND01GW4A0BV6E: Description32M X 16 FLASH 3V PROM, 35 ns, PDSO48; Categorystorage; File Size398KB，56 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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NAND01GW4A0BV6E Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

Parameter Name	Attribute value
Number of functions	1
Number of terminals	48
Maximum operating temperature	70 Cel
Minimum operating temperature	0.0 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	2.7 V
Rated supply voltage	3 V
maximum access time	35 ns
Processing package description	12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	0.5000 mm
terminal coating	NOT SPECIFIED
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	COMMERCIAL
memory width	16
organize	32M X 16
storage density	5.37E8 deg
operating mode	ASYNCHRONOUS
Number of digits	3.36E7 words
Number of digits	32M
Memory IC type	FLASH 3V PROM
serial parallel	PARALLEL

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