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NAND512W3A2CV6E

Description
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage    storage   
File Size398KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND512W3A2CV6E Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

NAND512W3A2CV6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instructionVSSOP, TSSOP48,.71,20
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time12000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
length15.4 mm
memory density536870912 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVSSOP
Encapsulate equivalent codeTSSOP48,.71,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
page size512 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height0.65 mm
Department size16K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width12 mm

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