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NEZ7785-4DD

Description
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
File Size75KB,18 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NEZ7785-4DD Overview

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50
are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
PACKAGE DIMENSIONS
(unit: mm)
0.5±0.1
2.5MIN.
C1.5 4PLACES
SOURCE
R1.6 2PLACES
GATE
2.4
12.9±0.2
3.2
6.45±0.05
DRAIN
17.0±0.2
21.0±0.3
10.7
2.5MIN.
SELECTION CHART
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
+0.1
0.1
–0.05
5.0MAX.
0.2MAX.
2.6±0.2
1.6
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
12.0
FEATURES
• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
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