NJG1301V
MEDIUM POWER AMPLIFIER GaAs MMIC
nGENERAL
DESCRIPTION
NJG1301V is a medium power amplifier which is
designed for use of output stage of Japanese
PHS and digital wireless phone.
NJG1301V features low operating voltage, high
efficiency, and comes with, internal input and output matching
circuit and very small SSOP package. This amplifier is operated
up to 21dBm output level with very low noise generation.
nPACKAGE
OUTLINE
NJG1301V
nFEATURES
lLow
operating voltage
+3.0V typ.
lLow
current consumption
185mA typ. @f=1.9GHz, P
out
=21dBm
lLow
distortion (ACP)
-60dBc typ. @f=1.9GHz, P
out
=21dBm
lReduction
of redact parasitic oscillation
lInput
and output internal matching circuits
lPackage
SSOP14
nPIN
CONFIGURATION
V Type
(Top View)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Pin connection
1.RF
in
8.RF
out
2.GND 9.GND
3.V
GG1
10.V
DD2
4.GND 11.GND
5.V
GG2
12.V
DD1
6.GND 13.GND
7.GND 14.GND
-1-
NJG1301V
nABSOLUTE
MAXIMUM RATINGS
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
V
DD1
,V
DD2
V
GG1
,V
GG2
P
in
P
D
T
opr
T
stg
CONDITIONS
V
GG1
,V
GG2
=-0.9V
V
DD1
,V
DD2
=-3.0V
V
DD1
,V
DD2
=-3.0V, V
GG1
,V
GG2
=-0.9V
At on PCB boad
(T
a
=+25°C, Z
s
=Z
l
=50Ω)
RATINGS
UNITS
6
V
-4
V
10
dBm
600
mW
-30~+85
°C
-40~+150
°C
nELECTRICAL
CHARACTERISTICS
PARAMETER
Operating Freq.
Drain Voltage
Gate Voltage
Idle Current *1
Operating Current *1
Gate Current *2
Small Signal Gain
Gain Flatness
Pout at 1dB Gain
Compression point
Adjacent Channel
Leakage Power 1
Adjacent Channel
Leakage Power 2
Input VSWR
Load VSWR Tolerance
SYMBOL
freq
V
DD1,2
V
GG1,2
I
idle
I
DD
I
GG
Gain
G
flat
P
-1dB
P
acp
1
P
acp
2
VSWR
i
-
CONDITIONS
V
DD1,2
=3.0V
V
DD1,2
=3.0V, I
idle
=170mA
V
DD1,2
=3.0V, RF No signal
V
DD1,2
=3.0V, P
out
=21dBm
V
DD1,2
=3.0V, P
out
=21dBm
V
DD1,2
=3.0V, I
idle
=170mA
V
DD1,2
=3.0V, I
idle
=170mA
V
DD1,2
=3.0V
V
DD1,2
=3.0V, P
out
=21dBm
offset=600kHz, P
in
;
π/4
DQPSK
V
DD1,2
=3.0V, P
out
=21dBm
offset=900kHz, P
in
;
π/4
DQPSK
V
DD1,2
=3.0V
V
DD1,2
=3.0V, P
out
=21dBm
Load VSWR=4:1, All phase
MIN
1.89
2.9
-1.25
165
170
-150
20
0
21
-
-
(T
a
=25°C, Z
s
=Z
l
=50Ω)
TYP
MAX
UNITS
-
1.92
GHz
3.0
5.0
V
-0.9
-0.6
V
170
175
mA
185
195
mA
-70
-
uA
23
26
dB
0.5
1.0
dB
22
-60
-65
-
-55
-60
dBm
dBc
dBc
-
-
2.2
Parasitic Osc. vs Fundamental
Signal Level -60dBc Max.
*1: Total current of V
DD1
terminal and V
DD2
terminal
*2: Total current of V
GG1
terminal and V
GG2
terminal
-2-
NJG1301V
nTYPICAL
CHARACTERISTICS
Gain vs. Frequency
(V =3.0V, I =170mA, V
DD
DD
GG
=-0.71V, T =25 C )
a
o
40
30
Gain (dB)
20
10
0
-10
0.0
1.0
2.0
Frequency f (GHz)
3.0
P
-50
acp
vs. Operating Current vs. V
(P
out
DD
=21dBm ,f=1.9GHz, T =25 C)
a
o
(V
250
Operating Current, Gate Current
vs. Input Power
o
DD
=3.0V, I
idle
=170mA, f=1.9GHz ,T
a
=25 C)
10
V =2.9V
(mA)
-55
DD
I
200
DD
(dBc)
Operating Current I
acp
3.3V
-65
5.0V
-70
4.0V
-75
140
P
I
150
GG
-10
100
-20
-10
-5
0
Input Power P
in
(dBm)
5
10
150
160
170
180
DD
190
200
Operating Current I (mA)
Gain, P
acp
vs. Ambient Temperature
(V
28
DD
Operating Current vs. Ambient Temperature
(V
DD
=3.0V,
idle
=170mA, P =21dBm, f=1.9GHz)
I
out
190
=3.0V, I
idle
=170mA, P
out
=21dBm, f=1.9GHz)
-55
26
P
Gain (dBm)
acp
Operating Current I (mA)
24
-60
Gain
22
P
acp
(dBc)
DD
185
180
20
-40
-20
0
20
40
o
-65
60
80
Ambient Temperature T
a
( C)
175
-40
-20
0
20
40
o
a
60
80
Ambient Temperature T ( C)
Gate Current I
GG
-60
DD
3.0V
0
( uA)
-3-
NJG1301V
nTYPICAL
CHARACTERISTICS
Gain vs. PHS Band Frequency
(V =3.0V, I =170mA, V =-0.71V, T =25 C)
DD
DD
GG
a
o
|S |, |S | vs. Frequency
11
22
25
20
(V
DD
=3.0V, I =170mA, T =25 C)
DD
a
o
24
10
Gain (dB)
|S |, |S | (dB)
23
0
|S |
22
11
22
22
-10
|S
11
|
-20
21
20
1.89
-30
1.90
1.91
1.92
0.0
1.0
2.0
3.0
Frequency f (GHz)
Frequency f (GHz)
Output Power,Total Current vs. Input Power
(V
25
DD
Output Power,P.A.E. vs. Input Power
( V =3V, f=1.9GHz, T =25 C )
DD
a
o
25
70
=3V, f=1.9GHz, T =25 C )
a
350
o
Output Power @I
20
idle
=80mA
300
20
Output Power @I
idle
=80mA
60
50
60mA
40mA
20mA
60mA
40mA
Total Current (mA)
15
10
5
0
-5
-10
-25
-20
-15
-10
-5
0
250
200
150
15
10
5
0
-5
-10
-25
-20
-15
-10
-5
in
Output Power P
Output Power P
20mA P.A.E.
@I =80mA
40
idle
60mA
40mA
20mA
30
20
10
0
0
5
10
Total Current
@I =80mA
idle
100
50
0
5
10
60mA
40mA
20mA
Input Power P
in
(dBm)
Input Power P (dBm)
-4-
Power Added Efficiency (%)
(dBm)
out
out
(dBm)
NJG1301V
nRECOMMENDED
CIRCUIT
V TYPE
RFin
1
RFin
GND
V
GG
(-0.5 ~ -1.2V)
I
DD
=0 @V
GG
<
-2V
C3
C1
C2
GND 14
GND
V
DD1
GND
V
DD2
GND
RF
out
C1: 1000pF
C2: 33pF
C3: 1uF
C4: 2.2nH
8
RF
out
L1
C2
C1
C3
C2
C1
V
GG1
GND
V
DD
(3.0~5.0V)
C1
C2
V
GG2
GND
7
GND
nRECOMMENDED
PCB DESIGN
PCB : FR4 t=0.2mm
1uF
CAPACITOR
MURATA GRM39 Series
INDUCTOR
TAIYO-YUDEN HK1608 Series
2.2nH
1uF
-5-
京公网安备 11010802033920号
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