Keysight Technologies
HSCH-9161 HSCH-9162
GaAs Detector Diode
Data Sheet
Features
– Low junction capacitance
– fc > 200 GHz
– Lower temperature coefficient than
silicon
– Durable construction
Typical 6 gram beam lead strength
High power handling capability
02 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode – Data Sheet
Description
The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier
integrated diode (MBID) process.
Absolute Maximum Ratings
Symbol
T
op
T
stg
P
B
Parameters/conditions
Operating temperature range
Storage temperature range
Burnout power
20
Typ.
Min.
–65
–65
Max.
150
200
Units
°C
°C
dBm
DC Specifications/Physical Properties
(T
A
= 25 °C)
Junction
capacitance (pF)
Typ.
HSCH-9161
HSCH-9162
0.035
0.035
Video
resistance (kΩ)
Min.
2.5
1.8
Max.
7.5
7.5
Voltage sensitivity
strength (mV/μW)
Min.
0.5
0.5
Typ.
Beam lead strength
Max.
3
3
Unit
Grams
Grams
Part number
200
03 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode – Data Sheet
Figure 2. Typical diode IV characteristic
Figure 3. Diode parameter variation with temperature
Figure 4. DC measurement assumes 50 Ω load; ideal diode would be 1 mV/μW
Figure 5. Rv = Rj + Rs
1.
Note: Each graph line represents a different value of RV or gamma at room temperature.
04 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode – Data Sheet
Applications
This diode is suitable for medium-low barrier, zero bias detector applications. The
HSCH-916x is functional through W–band (110 GHz) and can be mounted in microstrip,
finline, and coplanar circuits.
Assembly Techniques
Diodes are ESD sensitive. ESD preventive measures must be employed in all aspects of
storage, handling, and assembly. Diode ESD precautions, handling considerations, and
bonding methods are critical factors in successful diode performance and reliability.
Beam Lead Diode Bonding and Handling Procedures,
Application Note (5991-3513EN)
provides basic information on these subjects.
Typical small signal parameters as a function of bias
Parameter
–4.0 V
Rs(Ω)
Rj(Ω)
Cj(pF)
20
440
0.019
Zero bias
20
3000
0.035
+0.1 V
20
277
0.027
Bias voltage
+0.5 V
20
34
0.034
Note: Parameter values extracted from 26–40 GHz S–parameter data at –20 dBm.
Notes
This data sheet contains a variety of
typical and guaranteed performance
data. The information supplied should
not be interpreted as a complete list
of circuit specifications. Customers
considering the use of this, or other
TCA GaAs ICs, for their design
should obtain the current production
specifications from Keysight
Technologies, Inc.. In this data sheet
the term typical refers to the 50th
percentile performance. For additional
information and support email: mmic_
helpline@keysight.com.
05 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode – Data Sheet
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© Keysight Technologies, 2013 - 2014
Published in USA, August 3, 2014
5989-6228EN
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