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BAS16HT1G

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
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Rectifier Diode,

BAS16HT1G Parametric

Parameter NameAttribute value
MakerZOWIE Technology Corporation
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
Zowie Technology Corporation
Switching Diode
Lead free product
BAS16HT1G
CATHODE
1
2
1
ANODE
2
SOD-323
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM( surge )
Value
75
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board, T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
o
Symbol
P
D
Max.
200
1.57
635
150
Unit
mW
mW /
o
C
o
R
JA
T
J,
T
STG
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Reverse Breakdown Voltage ( I
BR
=100uAdc )
( I
F
=1.0 mAdc )
( I
F
=10 mAdc )
( I
F
=50 mAdc )
( I
F
=150 mAdc )
V
(BR)
75
-
-
-
-
-
715
855
1000
1250
Vdc
Forward Voltage
V
F
mVdc
Reverse Voltage Leakage Current
( V
R
=75 Vdc )
o
( V
R
=75 Vdc, T
J
=150 C )
o
( V
R
=25 Vdc, T
J
=150 C )
I
R
-
-
-
-
-
-
-
1.0
50
30
2.0
6.0
1.75
45
uAdc
Junction Capacitance ( V
R
=0, f=1.0MH
Z
)
Reverse Recovery Time ( I
F
=10 mAdc, to V
R =
5.0 Vdc, R
L=
500
Forward Recovery Voltage ( I
F
=10 mAdc, tr=20nS )
Stored Charge ( I
F
=10 mAdc, to V
R =
5.0 Vdc, R
L=
500
NOTE : FR-5=1.0 x 0.75 x 0.062in.
C
J
)
trr
V
FR
)
Q
S
pF
nS
Vdc
pC
2006/02/01
Zowie Technology Corporation
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