NTD5414N, NVD5414N
Power MOSFET
24 A, 60 V Single N−Channel DPAK
Features
•
•
•
•
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
http://onsemi.com
I
D
MAX
(Note 1)
24 A
V
(BR)DSS
60 V
R
DS(ON)
MAX
37 mW @ 10 V
N−Channel
D
•
•
•
•
LED Lighting and LED Backlight Drivers
DC−DC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
G
S
Unit
V
V
V
A
1 2
3
DPAK
CASE 369AA
STYLE 2
4
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(T
P
< 10
ms)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
V
GS
I
D
Value
60
$20
$30
24
16
55
75
−55 to
+175
24
86.4
W
A
°C
A
mJ
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
AYWW
54
14NG
2
1
3
Drain
Gate
Source
A
Y
WW
5414N
G
= Assembly Location*
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
t
p
= 10
ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V, I
L(pk)
= 24 A,
L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
(Note 1)
Symbol
R
qJC
R
qJA
Max
2.7
58.6
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
©
Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 2
Publication Order Number:
NTD5414N/D
NTD5414N, NVD5414N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C
T
J
= 150°C
V
DS
= 0 V, I
D
= 250
mA
60
67.3
1.0
50
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Voltage
I
GSS
V
DS
= 0 V, V
GS
=
$20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS(th)
V
GS(th)
/T
J
V
DS(on)
2.0
3.2
0.74
4.0
V
mV/°C
V
GS
= 10 V, I
D
= 24 A
V
GS
= 10 V, I
D
= 12 A, 150°C
0.7
0.7
28.4
24
1.16
V
Drain−to−Source On−Resistance
Forward Transconductance
R
DS(on)
g
FS
V
GS
= 10 V, I
D
= 24 A
V
DS
= 15 V, I
D
= 20 A
37
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 24 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
800
165
75
25
1.1
4.8
11.3
48
nC
1200
pF
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2)
V
SD
V
GS
= 0 V
I
S
= 24 A
T
J
= 25°C
T
J
= 125°C
0.92
0.8
45.7
31.7
14
76
nC
ns
1.15
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 24 A, R
G
= 9.1
W
12
58
47
69
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
t
rr
t
a
t
b
Q
RR
I
S
= 24 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
40
10 V
35
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
7V
30
25
20
5V
15
4.8 V
10
5
0
0
1
2
3
4
4.5 V
V
GS
= 4.2 V
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5.5 V
6V
T
J
= 25°C
35
30
25
20
15
10
T
J
= 25°C
5
0
2
3
4
T
J
= −55°C
5
6
T
J
= 125°C
40
V
DS
≥
10 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 24 A
T
J
= 25°C
0.040
T
J
= 25°C
V
GS
= 10 V
0.030
0.020
0.010
10
15
20
25
30
35
40
45
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.5
I
D
= 24 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
2.0
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1.5
100
T
J
= 125°C
1.0
0.5
−50
−25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
35
40
45
50
55 60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1500
C, CAPACITANCE (pF)
V
GS
= 0 V
T
J
= 25°C
Q
T
8
Q
1
Q
2
1000
C
iss
6
4
500
C
oss
0
0
C
rss
10
20
30
40
50
60
2
0
0
5
10
15
I
D
= 24 A
T
J
= 25°C
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
I
D
= 24 A
V
GS
= 10 V
100
t, TIME (ns)
t
f
t
d(off)
t
r
10
t
d(on)
25
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
T
J
= 25°C
20
15
10
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
0 V
≤
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
10 ms
10
dc
90
80
AVALANCHE ENERGY (mJ)
1 ms
100
ms
10
ms
70
60
50
40
30
20
10
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 24 A
I
D
, DRAIN CURRENT (A)
100
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
0.1
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10
1
r(t), (°C/W)
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTD5414NT4G
NVD5414NT4G*
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
