PD - 97543
AUTOMOTIVE GRADE
Features
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AUIRFZ44Z
AUIRFZ44ZS
HEXFET
®
Power MOSFET
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V
(BR)DSS
R
DS(on)
max.
I
D
D
D
55V
13.9m
Ω
51A
G
S
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other appli-
cations.
G
D
S
G
D
S
TO-220AB
AUIRFZ44Z
D
2
Pak
AUIRFZ44ZS
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise
specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.12a,12b,15,16
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
W
W/°C
V
mJ
A
mJ
°C
c
i
d
h
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
k
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010
AUIRFZ44Z/ZS
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
22
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.054
11.1
–––
–––
–––
–––
–––
–––
Typ.
29
7.2
12
14
68
33
41
4.5
7.5
1420
240
130
830
190
300
Max.
–––
–––
13.9
4.0
–––
20
250
200
-200
Max.
43
11
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 31A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Units
nC
Conditions
I
D
= 31A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 31A
R
G
= 15Ω
V
GS
= 10V
Between lead,
ns
f
f
nH
D
6mm (0.25in.)
from package
pF
G
and center of die contact
S
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
23
17
Max.
51
200
1.2
35
26
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
V
ns
nC
p-n junction diode.
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 25°C, I
F
= 31A, V
DD
= 28V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L =0.18mH,
R
G
= 25Ω, I
AS
= 31A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤
31A, di/dt
≤
840A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
T
J
= 25°C, L =0.18mH, R
G
= 25Ω, I
AS
= 31A, V
GS
=10V.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is rated at T
J
of approximately 90°C.
2
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AUIRFZ44Z/ZS
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
TO-220AB
N/A
N/A
MSL1
Class M2 (200V)
AEC-Q101-002
Class H1A (500V)
AEC-Q101-001
Charged Device Model
Class C5 (1125V)
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
TO-262
D
2
Pak
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFZ44Z/ZS
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.5V
4.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
1
100
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
60
1000
Gfs, Forward Transconductance (S)
50
40
30
20
10
T J = 25°C
ID, Drain-to-Source Current
(Α)
100
TJ = 175°C
10
T J = 25°C
T J = 175°C
1.0
2
4
6
VDS = 15V
≤60µs
PULSE WIDTH
8
10
12
V DS = 10V
0
0
10
20
30
40
50
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
4
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AUIRFZ44Z/ZS
10000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12.0
ID= 31A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 44V
VDS= 28V
VDS= 11V
C, Capacitance(pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
T J = 25°C
0.10
VGS = 0V
0.0
0.5
1.0
1.5
2.0
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
0.01
100
1000
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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