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NTE16002

Description
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
CategoryDiscrete semiconductor    The transistor   
File Size22KB,4 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Download Datasheet Parametric View All

NTE16002 Overview

Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz

NTE16002 Parametric

Parameter NameAttribute value
MakerNTE
package instructionPOST/STUD MOUNT, O-MUPM-P3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-based maximum capacity20 pF
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-MUPM-P3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power consumption environment23 W
Maximum power dissipation(Abs)23 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
NTE16002
Silicon NPN Transistor
RF Power Output, P
O
= 13.5W, 175MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
V
(BR)EBO
I
CEO
I
CEX
I
E
= 0.25mA, I
C
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 30V, V
BE(off)
= 1.5V,
T
C
= +200°C
V
CE
= 65V, V
BE(off)
= 1.5V
I
CBO
Emitter Cutoff Current
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
f
T
C
ob
V
CE
= 28V, I
C
= 150mA, f = 100MHz
V
CB
= 30V, I
E
= 0, f = 100kHz
400
16
20
MHz
pF
h
FE
V
CE(sat)
V
BE(sat)
V
CE
= 5V, I
C
= 1A
I
C
= 500mA, I
B
= 100mA
I
C
= 1A, I
B
= 5A
5
1.0
1.5
V
V
I
EBO
V
CB
= 65V, I
E
= 0
V
BE
= 4V, I
C
= 0
40
4
0.25
10
5
1
0.25
V
V
mA
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulsed through 25mH inductor.

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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