NTE2921 datasheet, PDF - EEWORLD Datasheet

NTE2921: Description15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247; CategoryDiscrete semiconductor The transistor; File Size28KB，3 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE2921 Overview

15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	550 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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