NTE2985 datasheet, PDF - EEWORLD Datasheet

NTE2985: Description30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size26KB，3 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE2985 Overview

30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	220 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	110 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	NTE2985	NTE2986
Description	30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET	30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified?	conform to	conform to
Maker	NTE	NTE
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	FAST SWITCHING	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	220 mJ	110 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	30 A	50 A
Maximum drain-source on-resistance	0.05 Ω	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	110 A	200 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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