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BLF8G20LS-200V112

Description
RF MOSFET Transistors 1.8-2GHz 65V 17.5dB
Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF8G20LS-200V112 Overview

RF MOSFET Transistors 1.8-2GHz 65V 17.5dB

BLF8G20LS-200V112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Id - Continuous Drain Current1.6 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance57 mOhms
TechnologySi
Gain17.5 dB
Output Power200 W
Mounting StyleSMD/SMT
Package / CaseSOT-1120B-7
PackagingTube
Operating Frequency1.8 GHz to 2 GHz
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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