RF MOSFET Transistors 1.8-2GHz 65V 17.5dB
Parameter Name | Attribute value |
Product Category | RF MOSFET Transistors |
Manufacturer | NXP |
RoHS | Details |
Id - Continuous Drain Current | 1.6 A |
Vds - Drain-Source Breakdown Voltage | 65 V |
Rds On - Drain-Source Resistance | 57 mOhms |
Technology | Si |
Gain | 17.5 dB |
Output Power | 200 W |
Mounting Style | SMD/SMT |
Package / Case | SOT-1120B-7 |
Packaging | Tube |
Operating Frequency | 1.8 GHz to 2 GHz |
Factory Pack Quantity | 60 |
Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 13 V |