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NTE6111

Description
1400 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
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NTE6111 Overview

1400 A, 600 V, SILICON, RECTIFIER DIODE

NTE6111 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
applicationPOWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.31 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current13600 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Maximum output current1400 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
NTE6111 & NTE6114
Silicon Power Rectifier Diode, 1100 Amp
Features:
D
Wide Current Range
D
High Voltage Rating
D
High Surge Current Capabilities
Applications:
D
Converters
D
Power Supplies
D
Machine Tool Controls
D
High Power Drives
D
Medium Traction Applications
Absolute Maximum Ratings:
Maximum Repetitive Peak Reverse Voltage, V
RRM
NTE6111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE6114 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, V
RSM
NTE6111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE6114 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Reverse Current (T
J
= +180°C), I
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +180°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Maximum Thermal Resistance, Junction–to–Heatsink (DC Operation), R
th(j–hs)
Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.076°C/W
Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.038°C/W
Maximum Mounting Force (±10%), F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9800 (1000) N (Kg)
Electrical Specifications:
Parameter
Maximum Average Forward Current
Symbol
I
F (AV)
Test Conditions
180°
Double side cooled, T
C
= +55°C
condition,
Half sine Single side cooled, T = +85°C
C
wave
Rating
1400
795
Unit
A
A

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Description 1400 A, 600 V, SILICON, RECTIFIER DIODE 1400 A, 1600 V, SILICON, RECTIFIER DIODE
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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