E30A27VS datasheet, PDF - EEWORLD Datasheet

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E30A27VS: DescriptionSTACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE); CategoryDiscrete semiconductor diode; File Size388KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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E30A27VS Overview

STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

E30A27VS Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	R-XSSO-X1
Contacts	1
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	R-XSSO-X1
Number of components	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Nominal reference voltage	27 V
surface mount	YES
technology	ZENER
Terminal form	UNSPECIFIED
Terminal location	SINGLE
Maximum voltage tolerance	11.11%
Working test current	10 mA

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SEMICONDUCTOR

TECHNICAL DATA

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

Average Forward Current : I

O

=30A.

E30A27VS, E30A27VR

STACK SILICON DIFFUSED DIODE

A3

A2

D3

A1

D1

D2

B1

E

F

POLARITY

E30A27VS

(+ Type)

E30A27VR

(- Type)

T

C2

H

MAXIMUM RATING (Ta=25

CHARACTERISTIC

DC Reverse Voltage

Average Forward Current

Peak 1 Cycle Surge Current

Non-Repetitive Reverse 1 Cycle

Surge Current

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

DC

I

F(AV)

I

FSM

I

RSM

T

j

T

stg

RATING

24

30

250 (50Hz)

50

-40 150

UNIT

V

A

DIM

A1

A2

A3

B1

B2

C1

C2

D1

MILLIMETERS

_

10.0 + 0.3

_

13.5 + 0.3

_

24.0 + 0.5

_

8.5 + 0.3

_

10.0 + 0.3

_

2.0 + 0.3

_

5.0 + 0.3

_ 0.3

2.5 +

DIM

D2

D3

E

F

G

H

T

MILLIMETERS

_

5.0 + 0.3

_

4.5 + 0.3

_

1.9 + 0.3

_

9.0 + 0.3

_

1.0 + 0.3

_

4.4 + 0.5

_

0.6 + 0.3

MR

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Zener Voltage

Peak Forward Voltage

Repetitive Peak Reverse Current

Zener Voltage

Temperature Coefficient

Reverse Recovery Time

Temperature Resistance

SYMBOL

V

Z

V

FM

I

RRM

r

Z

t

rr

R

th

TEST CONDITION

I

Z

=10mA

I

FM

=100A

V

RRM

=24V

I

Z

=10mA

I

F

=0.1A, I

R

=0.1A

DC total junction to case

MIN.

24

-

23

-

TYP.

-

MAX.

30

1.2

50

36

15

1.0

UNIT

V

A

mV/

S

/W

2002. 10. 9

Revision No : 1

C1

G

B2

1/2

E30A27VS Related Products

	E30A27VS	E30A27VR
Description	STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)	STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
Maker	KEC	KEC
package instruction	R-XSSO-X1	R-XSSO-X1
Contacts	1	1
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	ZENER DIODE	ZENER DIODE
JESD-30 code	R-XSSO-X1	R-XSSO-X1
Number of components	1	1
Number of terminals	1	1
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL
Nominal reference voltage	27 V	27 V
surface mount	YES	YES
technology	ZENER	ZENER
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	SINGLE	SINGLE
Maximum voltage tolerance	11.11%	11.11%
Working test current	10 mA	10 mA

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