RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN
| Parameter Name | Attribute value |
| Maker | Qorvo |
| package instruction | HERMETIC SEALED, MWP-35, 3 PIN |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | HIGH RELIABILITY |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 14 V |
| Maximum drain current (ID) | 2.8 A |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | C BAND |
| JESD-30 code | R-CDFM-F2 |
| JESD-609 code | e4 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | DEPLETION MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
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