polyfet rf devices
P121
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
PATENTED GOLD METALLIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
1.0 Watts Single Ended
Package Style SO8
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T
C
= 25 C )
Total
Device
Dissipation
10 Watts
Junction to
Case Thermal
Resistance
o
15.00 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
50 V
Drain to
Source
Voltage
50 V
Gate to
Source
Voltage
30 V
0.8 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
10
50
TYP
1.0 WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
TEST CONDITIONS
Idq = 0.20 A, Vds =
12.5
V, F =
Idq = 0.20 A, Vds =
12.5
V, F =
850
MHz
850
MHz
η
VSWR
Relative Idq = 0.20 A, Vds =
12.5
V, F =
850
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
0.2
2.00
2.30
7.5
1.2
8.0
MIN
40
0.2
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 0.01 A, Vgs = 0V
Vds = 12.5 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.02 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 1.60 A
Vgs = 20V, Vds = 10V
Vds = 12.5 Vgs = 0V, F = 1 MHz
Vds = 12.5 Vgs = 0V, F = 1 MHz
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 06/19/2000
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
P121
POUT VS PIN GRAPH
P121 PIN VS POUT F=850 MHZ; IDQ=0.2A; VDS=12.5V
CAPACITANCE VS VOLTAGE
F2C 1 DIE CAPACITANCE
2
1.8
1.6
1.4
POUT IN WATTS
1.2
1
0.8
0.6
0.4
0.2
0
0
0.05
0.1
0.15
PIN IN WATTS
0.2
0.25
POUT
Efficiency = 40%
GAIN
12.5
12
11.5
11
GAIN IN DB
10.5
10
9.5
9
8.5
8
0.3
100
10
Ciss
Coss
Crss
1
0
5
10
15
VDS IN VOLTS
20
25
30
IV CURVE
F2C I DIE IV CURVE
10
ID & GM VS VGS
F2C 1 DIE GM & ID vs VGS
2.5
2
1
Id
1.5
1
0.1
Gm
0.5
0
0
2
4
6
8
Vds in Volts
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
10
12
14
16
0.01
0
2
4
6
Vgs in Volts
8
10
12
14
S11 & S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 06/19/2000
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Microcontroller MCU
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