TC59S6408BFT-10 datasheet, PDF

TC59S6408BFT-10: Descriptionmos digital integrated circuit silicon monolithic; Categorystorage storage; File Size2MB，51 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC59S6408BFT-10 Overview

mos digital integrated circuit silicon monolithic

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm

	TC59S6408BFT-10	TC59S6416-80	TC59S6404	TC59S6404BFT-80	TC59S6404BFT-10	TC59S6408BFTL-10	TC59S6416	TC59S6408	TC59S6416-10	TC59S6408BFTL-80
Description	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic	1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S synchronous dynamic ram	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic	mos digital integrated circuit silicon monolithic

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