Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD716
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SB686
APPLICATIONS
・Power
amplifier applications
・Recommend
for 30~35W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
T
T
j
T
stg
固电
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Total power dissipation
Junction temperature
Storage temperature
ES
ANG
CH
PARAMETER
导½
半
Open emitter
ON
MIC
E
CONDITIONS
OR
DUT
VALUE
100
100
5
6
-6
UNIT
V
V
V
A
A
W
℃
℃
Open base
Open collector
T
C
=25℃
60
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ,I
B
=0
I
E
=10mA ,I
C
=0
I
C
=4A; I
B
=0.4A
I
C
=4A ; V
CE
=5V
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V ;f=1MHz
55
12
MIN
100
5
TYP.
2SD716
MAX
UNIT
V
V
2.0
1.5
10
10
160
V
V
μA
μA
h
FE
Classifications
R
55-110
固电
IN
O
Output capacitance
80-160
ES
ANG
CH
导½
半
ON
MIC
E
OR
DUT
100
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD716
固电
IN
ES
ANG
CH
导½
半
ON
MIC
E
OR
DUT
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
京公网安备 11010802033920号
EEWORLD
