@vic
AV8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The
@vic AV8050S
is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
3
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to
@vic AV8550S
2
MARKING
SOT-23
D9
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25℃)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
20
5
1
700
150
-65 ~ +150
UNIT
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
hFE
1
hFE2
hFE3
V
CE
(sat)
V
BE
(sat)
V
BE
TEST CONDITIONS
Ic=100µA,I
E
=0
Ic=1mA,I
B
=0
I
E
=100µA,Ic=0
V
CB
=30V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=150 mA
V
CE
=1V,Ic=500mA
Ic=500mA,I
B
=50mA
Ic=500mA,I
B
=50mA
V
CE
=1V,Ic=10mA
MIN
30
20
5
TYP
MAX
UNIT
V
V
V
uA
nA
1
100
100
120
40
110
400
0.5
1.2
1.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
V
QW-R206-001,A
@vic
AV8050S
PARAMETER
Current Gain Bandwidth Product
Output Capacitance
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
f
T
Cob
TEST CONDITIONS
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0
f=1MHz
MIN
100
TYP
9.0
MAX
UNIT
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
0.5
Fig.2 DC current Gain
3
10
2
10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
I
B
=3.0mA
Ic,Collector current (mA)
0.4
I
B
=2.0mA
0.3
H
FE
, DC current Gain
I
B
=2.5mA
V
CE
=1V
2
10
V
CE
=1V
1
10
I
B
=1.5mA
I
B
=1.0mA
I
B
=0.5mA
0.2
1
10
0
10
0.1
0
0
0.4
0.8
1.2
1.6
2.0
0
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
10
3
10
Fig.5 Current gain-bandwidth
product
Current Gain-bandwidth
T
product,f(MHz)
V
CE
=10V
2
10
Fig.6 Collector output
Capacitance
Cob,Capacitance (pF)
3
10
Saturation voltage (mV)
Ic=10*I
B
V
BE
(sat)
3
10
2
10
f=1MHz
I
E
=0
2
10
1
10
1
10
V
CE
(sat)
1
10
-1
10
0
10
1
10
2
10
3
10
0
10
0
10
1
10
2
10
3
10
0
10
0
10
1
10
2
10
3
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
QW-R206-001,A
京公网安备 11010802033920号
EEWORLD
