U630H16XSK35 datasheet, PDF - EEWORLD Datasheet

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U630H16XSK35: Descriptionhardstore 2K x 8 nvsram die; Categorystorage storage; File Size240KB，16 Pages; ManufacturerSimtek; Websitehttp://www.simtek.com

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U630H16XSK35 Overview

hardstore 2K x 8 nvsram die

U630H16XSK35 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Simtek
Objectid	2089108018
package instruction	DIE, DIE OR CHIP
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	218868681
Maximum access time	35 ns
JESD-30 code	R-XUUC-N34
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
Number of terminals	34
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Package body material	UNSPECIFIED
encapsulated code	DIE
Encapsulate equivalent code	DIE OR CHIP
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Maximum slew rate	0.085 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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Obsolete - Not Recommended for New Designs

U630H16XS

HardStore

2K x 8 nvSRAM Die

Features

Description

The U630H16 has two separate

modes of operation: SRAM mode

and non-volatile mode, determined

by the state of the NE pad.

In SRAM mode, the memory ope-

rates as an ordinary static RAM. In

non-volatile operation, data is

transferred in parallel from SRAM

to EEPROM or from EEPROM to

SRAM. In this mode SRAM

functions are disabled.

The U630H16 is a fast static RAM

(25, 35, 45 ns), with a non-volatile

electrically

erasable

PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent non-volatile data resi-

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation), or from the

EEPROM to the SRAM (the

RECALL operation) are initiated

through the state of the NE pad.

The U630H16 combines the high

performance and ease of use of a

fast SRAM with non-volatile data

integrity.

Once a STORE cycle is initiated,

further input or output are disabled

until the cycle is completed.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the non-vola-

tile information is transferred into

the SRAM cells.

The RECALL operation in no way

alters the data in the EEPROM

cells. The non-volatile data can be

recalled an unlimited number of

times.

The chips are tested with a

restricted wafer probe program

at room temperature only. Unte-

sted parameters are marked with

a number sign (#).

•

High-performance CMOS non-

volatile static RAM 2048 x 8 bits

25, 35 and 45 ns Access Times

12, 20 and 25 ns Output Enable

Access Times

Hardware STORE Initiation

(STORE Cycle Time < 10 ms)

Automatic STORE Timing

STORE cycles to EEPROM

100 years data retention in

EEPROM

Automatic RECALL on Power Up

Hardware RECALL Initiation

(RECALL Cycle Time < 20

μs)

Unlimited RECALL cycles from

EEPROM

Unlimited SRAM Read and Write

Single 5 V

10 % Operation

Operating temperature ranges:

0 to 70

°C

-40 to 85

°C

QS 90000 Quality Standard

ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

Pad Configuration

VCC

VBND

HSB

Pad Description

Signal Name

A0 - A10

DQ0 - DQ7

VCC

VSS

VBND

Signal Description

Address Inputs

Data In/Out

Chip Enable

Output Enable

Write Enable

Nonvolatile Enable

Power Supply Voltage

Ground

HardStore type enable

A10

DQ0

DQ1

DQ2

VSS

VCC

DQ3

DQ4

DQ5

DQ6

DQ7

March 31, 2006

STK Control #ML0039

Rev 1.0

U630H16XSK35 Related Products

	U630H16XSK35	U630H16XSA25	U630H16XSC35	U630H16XSK25	U630H16XSA45	U630H16XSC25	U630H16XS	U630H16XSC45
Description	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die	hardstore 2K x 8 nvsram die
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-	incompatible	-	incompatible
Maker	Simtek	-	Simtek	Simtek	-	Simtek	-	Simtek
package instruction	DIE, DIE OR CHIP	-	DIE, DIE OR CHIP	DIE, DIE OR CHIP	-	DIE, DIE OR CHIP	-	DIE, DIE OR CHIP
Reach Compliance Code	unknown	-	unknown	unknown	-	unknown	-	unknown
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99	-	EAR99
Maximum access time	35 ns	-	35 ns	25 ns	-	25 ns	-	45 ns
JESD-30 code	R-XUUC-N34	-	R-XUUC-N34	R-XUUC-N34	-	R-XUUC-N34	-	R-XUUC-N34
JESD-609 code	e0	-	e0	e0	-	e0	-	e0
memory density	16384 bit	-	16384 bit	16384 bit	-	16384 bit	-	16384 bit
Memory IC Type	NON-VOLATILE SRAM	-	NON-VOLATILE SRAM	NON-VOLATILE SRAM	-	NON-VOLATILE SRAM	-	NON-VOLATILE SRAM
memory width	8	-	8	8	-	8	-	8
Number of functions	1	-	1	1	-	1	-	1
Number of terminals	34	-	34	34	-	34	-	34
word count	2048 words	-	2048 words	2048 words	-	2048 words	-	2048 words
character code	2000	-	2000	2000	-	2000	-	2000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	70 °C	85 °C	-	70 °C	-	70 °C
organize	2KX8	-	2KX8	2KX8	-	2KX8	-	2KX8
Package body material	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	-	UNSPECIFIED
encapsulated code	DIE	-	DIE	DIE	-	DIE	-	DIE
Encapsulate equivalent code	DIE OR CHIP	-	DIE OR CHIP	DIE OR CHIP	-	DIE OR CHIP	-	DIE OR CHIP
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR
Package form	UNCASED CHIP	-	UNCASED CHIP	UNCASED CHIP	-	UNCASED CHIP	-	UNCASED CHIP
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	-	PARALLEL	-	PARALLEL
Peak Reflow Temperature (Celsius)	240	-	240	240	-	240	-	240
power supply	5 V	-	5 V	5 V	-	5 V	-	5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified
Maximum standby current	0.002 A	-	0.001 A	0.001 A	-	0.001 A	-	0.001 A
Maximum slew rate	0.085 mA	-	0.085 mA	0.085 mA	-	0.085 mA	-	0.085 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	-	5.5 V	-	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	-	4.5 V	-	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	-	5 V	-	5 V
surface mount	YES	-	YES	YES	-	YES	-	YES
technology	CMOS	-	CMOS	CMOS	-	CMOS	-	CMOS
Temperature level	INDUSTRIAL	-	COMMERCIAL	INDUSTRIAL	-	COMMERCIAL	-	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)	-	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	-	Tin/Lead (Sn85Pb15)	-	Tin/Lead (Sn85Pb15)
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	-	NO LEAD	-	NO LEAD
Terminal location	UPPER	-	UPPER	UPPER	-	UPPER	-	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED

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