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TPS851

Description
silicon epitaxial planar
CategoryLED optoelectronic/LED    photoelectric   
File Size267KB,12 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TPS851 Overview

silicon epitaxial planar

TPS851 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Objectid1941778906
package instruction2 X 2.10 MM, 0.70 MM HEIGHT, LEAD FREE, PACKAGE-5
Reach Compliance Codeunknown
compound_id1774878
Other featuresHIGH SENSITIVITY
applicationAMPLIFIER
ConfigurationSINGLE
Infrared rangeNO
Installation featuresSURFACE MOUNT
Number of functions1
Maximum on-state current0.005 A
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
Optoelectronic device typesLINEAR OUTPUT PHOTO IC
shapeRECTANGULAR
size2 mm
Minimum supply voltage2.7 V
Nominal supply voltage3 V
surface mountYES
TPS851
TOSHIBA Photo-IC
Silicon Epitaxial Planar
TPS851
Mobile Phones, PHS
Notebook PCs, PDAs
Video cameras, Digital Still Cameras
Other Equipment Requiring Luminosity Adjustment
The TPS851 is an ultra-compact surface-mount photo-IC for
illuminance sensors which incorporates a photodiode and current amp
TOSHIBA
circuit in a single chip.
Weight: 0.0054 g (typ.)
The sensitivity is superior to that of a phototransistor, and exhibits
little variation.
It has spectral sensitivity closer to luminous efficiency and excellent output linearity.
With its ultra-compact surface-mount package, this photo-IC can be used as the power-saving control for
domestic appliances or for backlighting for displays in cellular phones, this device enables low power consumption
to be achieved.
Ultra-compact and light surface-mount package: 2.0 × 2.1 × 0.7 mm
Excellent output linearity of illuminance
Little fluctuation in light current and high level of sensitivity
: I
L
= 37
μA
to 74
μA
@E
V
= 100 lx using fluorescent light
: Light current variation width: ×1.67 (when light current classification is specified.)
: Little temperature fluctuation
Built-in luminous-efficiency correction function, reduced sensitivity variations due to various light sources
: I
L
(using incandescent light)/I
L
(using fluorescent light) = 1.2 (typ.)
Low supply voltage, making device suitable for battery-powered equipment: V
CC
= 2.7 V to 5.5 V
Lead(Pb)-Free
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
Output voltage
Light current
Permissible power dissipation
Operating temperature range
Storage temperature range
Soldering temperature range
(Note 1)
Symbol
V
CC
V
OUT
I
L
P
T
opr
T
stg
T
sol
Rating
−0.5
to 7
Unit
V
V
mA
mW
°C
°C
°C
<
V
CC
=
5
35
−30
to 85
−40
to 100
260
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The reflow time and the recommended temperature profile are shown in the section entitled Handling
Precautions.
1
2007-10-01

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Description silicon epitaxial planar silicon epitaxial planar

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