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IRFE110

Description
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.1A I(D),LLCC
CategoryDiscrete semiconductor    The transistor   
File Size81KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

IRFE110 Overview

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.1A I(D),LLCC

IRFE110 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)3.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)11 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

IRFE110 Related Products

IRFE110
Description TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.1A I(D),LLCC
Is it Rohs certified? incompatible
Maker NXP
Reach Compliance Code unknown
Configuration Single
Maximum drain current (Abs) (ID) 3.1 A
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 11 W
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Base Number Matches 1
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