TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.1A I(D),LLCC
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | NXP |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 3.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 11 W |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Base Number Matches | 1 |
IRFE110 | |
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Description | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.1A I(D),LLCC |
Is it Rohs certified? | incompatible |
Maker | NXP |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 3.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 11 W |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Base Number Matches | 1 |