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THN6301E

Description
npn sige RF transistor
File Size205KB,11 Pages
ManufacturerTACHYONICS
Websitehttp://www.tachyonics.co.kr/
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THN6301E Overview

npn sige RF transistor

THN6301 Series
SOT 523
Unit in mm
NPN SiGe RF TRANSISTOR
Application
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V
CE
= 8 V, I
C
= 5 mA
o High Power Gain
MAG =18 dB Typ. @ f = 1 GHz, V
CE
= 8 V, I
C
=15 mA
o High Transition Frequency
f
T
= 10 GHz Typ. @ V
CE
= 8 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
Unit
V
V
V
mA
mW
Available Package
Product
Package
SOT23
SOT323
SOT343
SOT523
SOT623F
h
FE
Classification
Marking
h
FE
AA1
AA2
125 to 300 80 to 160
THN6301S
THN6301U
THN6301Z
THN6301E
THN6301KF
Ratings
25
12
2.5
65
150
-65 ~ 150
150
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/11 -
Aug.-2005
Rev 2.0

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Description npn sige RF transistor npn sige RF transistor npn sige RF transistor npn sige RF transistor

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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