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F1003

Description
patented gold metalized silicon gate enhancement mode RF power vdmos transistor
CategoryDiscrete semiconductor    The transistor   
File Size37KB,2 Pages
ManufacturerPolyfet RF Devices
Websitehttp://www.polyfet.com/
Environmental Compliance
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F1003 Overview

patented gold metalized silicon gate enhancement mode RF power vdmos transistor

F1003 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPolyfet RF Devices
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)120 W
surface mountNO

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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