patented gold metalized silicon gate enhancement mode RF power vdmos transistor
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Polyfet RF Devices |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 6 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 200 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 120 W |
surface mount | NO |