TIC253 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
DECEMBER 1971 - REVISED MARCH 1997
q
q
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High Current Triacs
20 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
150 A Peak Current
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT2
2
SOT-93 PACKAGE
(TOP VIEW)
MT1
1
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2AD
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
TIC253D
Repetitive peak off-state voltage (see Note 1)
TIC253M
TIC253S
TIC253N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
V
DRM
SYMBOL
VALUE
400
600
700
800
20
150
±1
-40 to +110
-40 to +125
230
A
A
A
°C
°C
°C
V
UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Peak gate trigger
current
V
D
= Rated V
DRM
V
supply
= +12 V†
I
GTM
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
GTM
Peak gate trigger
voltage
Peak on-state voltage
Holding current
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
TM
I
H
I
TM
= ±28.2 A
V
supply
= +12 V†
V
supply
= -12 V†
TEST CONDITIONS
I
G
= 0
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
I
G
= 50 mA
I
G
= 0
I
G
= 0
T
C
= 110°C
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
(see Note 4)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
7
-15
-16
28
0.7
-0.7
-0.8
0.8
±1.4
6
-13
2
-2
-2
2
±1.7
40
-40
V
mA
V
MIN
TYP
MAX
±2
50
-50
-50
mA
UNIT
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC253 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
I
L
dv/dt
dv/dt
(c)
di/dt
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Critical rate of rise of
on -state current
V
supply
= +12 V†
V
supply
= -12 V†
V
D
= Rated V
D
V
D
= Rated V
D
di/dt = 0.5 I
T(RMS)
/ms
V
D
= Rated V
D
di
G
/dt = 50 mA/µs
I
GT
= 50 mA
TEST CONDITIONS
(see Note 5)
I
G
= 0
T
C
= 110°C
T
C
= 80°C
I
T
= 1.4 I
T(RMS)
T
C
= 110°C
MIN
TYP
20
-20
±450
±1
±200
MAX
UNIT
mA
V/µs
V/µs
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
Ω,
t
p(g)
= 20
µs,
t
r
=
≤
15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.52
36
UNIT
°C/W
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
TC10AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
0·1
TC10AB
I
GT
- Gate Trigger Current - mA
100
V
GT
- Gate Trigger Voltage - V
ALL QUADRANTS
0·01
10
1
V
supply
I
GTM
+
+
+
-
-
-
-
+
-40
-20
0
20
40
60
V
AA
= ± 12 V
R
L
= 10
Ω
t
p(g)
= 20 µs
80
100
120
V
AA
= ± 12 V
R
L
= 10
Ω
t
p(g)
= 20 µs
0·001
-60
0·1
-60
-40
-20
0
20
40
60
80
100
120
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
Figure 1.
Figure 2.
PRODUCT
INFORMATION
2
TIC253 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
CASE TEMPERATURE
100
TC10AD
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
10
TC10AC
V
GF
- Gate Forward Voltage - V
I
H
- Holding Current - mA
10
1
MAX
TYP
MIN
1
V
supply
+
-
0·1
-60
-40
-20
0
20
V
AA
= ± 12 V
I
G
= 0
Initiating I
TM
= 100 mA
40
60
80
100
120
0·1
I
A
= 0
T
C
= 25 °C
QUADRANT 1
0·01
0·001
0·01
0·1
1
10
T
C
- Case Temperature - °C
I
GF
- Gate Forward Current - A
Figure 3.
Figure 4.
LATCHING CURRENT
vs
CASE TEMPERATURE
1000
TC10AE
I
L
- Latching Current - mA
100
10
V
supply
I
GTM
+
+
-
-
1
-60
-40
+
-
-
+
-20
0
20
40
V
AA
= ± 12 V
60
80
100
120
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
3
TIC253 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
PRODUCT
INFORMATION
4
TIC253 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
5
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