VTP Process Photodiodes
VTP3410LA
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a long T-
1, endlooking package. The package material is
infrared transmitting (blocking visible light).
These diodes exhibit low dark current under
reverse bias and fast speed of response.
CASE 50A LONG T-1
CHIP ACTIVE AREA: .0011 in
2
(0.684 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTP curves, page 46)
VTP3410LA
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
30
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
700
925
140
±20
1.9 x 10
-13
UNITS
Typ.
22
.26
350
-2.0
35
10
25
.013
.55
1150
Max.
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
(Typ.)
W
⁄
Hz
cm Hz / W
15
5.3 x 10
11
(Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
54
RF/Wirelessly
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