LED - Chip
25.02.2008
Radiation
Infrared
Type
Point Source
Technology
AlGaAs/AlGaAs
ELC-740-29-40
rev. 03
Electrodes
N (cathode) up
typ. dimensions (µm)
Ø100
+7
-3
typ. thickness
150 (±25) µm
360
- 10
+ 20
R
30
310
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
245
450
+ 20
-10
180
PS-14
Maximum Ratings
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward current (DC)
Peak forward current
t
P
≤
50 µs,
t
P
/T = 1/2
180
R
15
5
Symbol
I
F
I
FM
Min
Typ
Max
75
150
Unit
mA
mA
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
Forward voltage
Forward voltage
2
Reverse voltage
Radiant power
1
Radiant power
1,2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1)
2)
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
λ
P
∆λ
0.5
t
r
, t
f
Min
Typ
1.75
1.9
Max
2.2
Unit
V
V
V
I
F
= 20 mA
I
F
= 50 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 50 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
5
0.8
1.2
2.8
730
740
30
40
750
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
for information only
Labeling
Type
ELC-740-29-40
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
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