Preliminary
LED - Chip
Radiation
Blue
Type
Standard
10.04.2007
Technology
InGaN/Al
2
O
3
ELС-460-34
rev. 01/07
Electrodes
Both on top side
300
Ø 80
typ. dimensions in µm (±20 µm)
typ. thickness
90 (±20) µm
P
300
front side metalization
Au-alloy, 0.5 µm
backside metalization
Al-alloy, 1.5 µm
N
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Operating temperature range
Storage temperature range
(t
P
≤
50 µs, t
P
/T = 1/2)
Test conditions
Symbol
I
F
I
FM
T
amb
T
stg
Value
30
100
-40 to +85
-40 to +100
Unit
mA
mA
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Luminous intensity
1
Peak wavelength
Dominant wavelength
Spectral bandwidth at 50%
Switching time
1
Symbol
V
F
V
R
Ι
v
λ
P
λ
D
∆λ
0.5
t
r
, t
f
Min
Typ
3.3
Max
3.5
Unit
V
V
I
F
= 20 mA
I
F
= 10 µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
5
50
450
60
460
463
25
20
470
mcd
nm
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Ι
v
(typ) [mcd]
Labeling
Type
ELС-460-34
Lot N°
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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