LED - Chip
Preliminary
Radiation
Infrared
Type
MQW
10.04.2007
Technology
InGaAs/InP
ELC-1060-17
rev. 02/06
Electrodes
P (anode) up
360
300
typ. dimensions (µm)
typ. thickness
260 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
LED-11
R
6
11
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
t
P
≤
50 µs,
t
P
/T = 1/2
360
Test
conditions
Symbol
I
F
I
FM
Min
Typ
Max
100
200
Unit
mA
mA
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Forward voltage
Forward voltage
Reverse voltage
Radiant power
1
Radiant power
1
Radiant power
2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
Test
conditions
I
F
= 20 mA
I
F
= 100 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Symbol
Min
Typ
Max
Unit
V
F
V
F
V
R
Φ
e
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
1040
5
0.4
2.0
1.05
1.20
1.3
1.4
V
V
V
0.6
2.8
5.5
1060
50
10
1080
mW
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Measured on epoxy covered chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-1060-17
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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