EEWORLDEEWORLDEEWORLD

Part Number

Search

TC2384

Description
RF Small Signal Field-Effect Transistor, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size188KB,4 Pages
ManufacturerTranscom,Inc.
Websitehttp://www.transcominc.com.tw/
Download Datasheet Parametric View All

TC2384 Overview

RF Small Signal Field-Effect Transistor, N-Channel

TC2384 Parametric

Parameter NameAttribute value
Objectid113947096
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum drain current (Abs) (ID)0.18 A
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.8 W
TC2384
REV4_20070507
Low Noise and Medium Power Packaged GaAs FETs
FEATURES
!
0.9dB Typical Noise Figure at 12GHz
!
!
!
!
!
!
!
!
!
High Associated Gain: Ga = 10dB Typical at 12GHz
23.5dBm Typical Power at 12GHz
11dB Typical Power Gain at 12GHz
Breakdown Voltage : BV
DGO
9V
Lg = 0.25
µm,
Wg = 600
µm
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2384 is a high performance field effect transistor housed in a ceramic micro-x package with TC1304
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
be suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
P
1dB
G
L
I
DSS
g
m
V
P
BV
DGO
R
th
Conditions
Noise Figure at V
DS
= 4 V, I
DS
= 50 mA,
f
= 12GHz
= 12GHz
= 12GHz V
DS
= 6 V, I
DS
= 80 mA
7.5
23.5
9
Associated Gain at V
DS
= 4 V, I
DS
= 50 mA,
f
Linear Power Gain,
f
MIN
TYP
0.9
9
24.5
10
180
200
-1.0*
9
12
75
MAX
1.2
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
Output Power at 1dB Gain Compression Point,
f
= 12GHz V
DS
= 6 V, I
DS
= 80 mA
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 1.2mA
Drain-Gate Breakdown Voltage at I
DGO
= 0.3mA
Thermal Resistance
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
V
DS
V
GS
I
DS
I
GS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I
DSS
600
µA
24 dBm
800 mW
175
°C
- 65
°C
to +175
°C
TYPICAL NOISE PARAMETERS (T
A
=25
°
C)
V
DS
= 4 V, I
DS
= 50 mA
Frequency
(GHz)
2
4
6
8
10
12
14
16
18
NF
opt
(dB)
0.36
0.48
0.59
0.70
0.82
0.93
1.05
1.16
1.27
G
A
(dB)
19.7
16.6
14.3
12.7
11.7
10.9
10.4
9.8
9.0
Γ
opt
MAG
0.80
0.67
0.56
0.49
0.46
0.45
0.46
0.47
0.48
ANG
15
39
64
92
120
148
174
-162
-141
Rn/50
0.28
0.18
0.15
0.12
0.09
0.06
0.04
0.04
0.07
* For the tight control of the pinch-off voltage range, we divide TC2384 into 3 model numbers to fit customer design requirement
(1)TC2384P0710 : Vp = -0.7V to -1.0V (2)TC2384P0811 : Vp = -0.8V to -1.1V (3)TC2384P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号