AP03N70H/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Repetitive Avalanche Rated
▼
Fast Switching Speed
▼
Simple Drive Requirement
▼
RoHS Compliant
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
3.6Ω
3.3A
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP03N70J) is available for low-profile
applications.
G D
S
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
600
±30
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200705052-1/4
AP03N70H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
∆BV
DSS
/∆T
j
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=1.6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1.6A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=3.3A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=3.3A
R
G
=10Ω,V
GS
=10V
R
D
=91Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
2
-
-
-
11.4
3.1
4.2
8.4
6
17.7
5.9
600
45
4
Max. Units
-
-
3.6
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
3
2
Test Conditions
I
S
=3A, V
GS
=0V
I
S
=3A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
422
2580
Max. Units
1.5
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting T
j
=25 C , V
DD
=50V , L=15mH , R
G
=25Ω , I
AS
=3A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP03N70H/J
4
T
C
=25 C
3
o
10V
6.0V
2
T
C
=150 C
o
10V
5.0V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
2
4.5V
1
2
5.0V
1
4.0V
1
4.5V
V
G
=4.0V
0
V
G
=3.5V
0
0
5
10
15
20
25
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.5
2.1
Normalized BV
DSS
(V)
1.1
I
D
=1.6A
V
G
=10V
Normalized R
DS(ON)
1.7
1.0
1.3
0.9
0.9
0.5
0.8
-50
0
50
100
150
0.1
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
10
V
GS(th)
(V)
1.3
3
I
S
(A)
1
T
j
= 150
o
C
T
j
= 25
o
C
2
0.1
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP03N70H/J
f=1.0MHz
16
10000
14
V
GS
, Gate to Source Voltage (V)
12
I
D
=3.3A
V
DS
=480V
C
iss
C (pF)
10
8
100
C
oss
6
4
C
rss
2
1
0
0
4
8
12
16
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
10us
I
D
(A)
1
0.1
0.05
0.02
100us
1ms
0.1
0.01
P
DM
t
Single Pulse
0.1
10ms
T
c
=25 C
Single Plude
o
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
100ms
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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