PHP83N06T
TrenchMOS™ Standard Level FET
Rev. 01 — 11 January 2002
M3D307
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
1
technology, featuring very low on-state resistance.
Product availability:
PHP83N06T in SOT78
(TO-220AB).
2. Features
s
TrenchMOS™ technology
s
Fast switching
s
Low on-state resistance.
3. Applications
s
Switch mode power supplies
s
Uninterruptible power supplies
s
General purpose switching.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, simplified outline and symbol
Description
gate (g)
mb
d
Simplified outline
Symbol
drain (d)
source (s)
mounting base;
connected to drain (d)
g
s
MBB076
MBK106
1 2 3
SOT78 (TO-220AB)
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
mb
= 25
°C;
V
GS
= 10 V
T
mb
= 25
°C
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°C
T
j
= 175
°C
9
-
12
24
mΩ
mΩ
Typ
-
-
-
-
Max
60
75
166
175
Unit
V
A
W
°C
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
E
DS(AL)
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 65 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
Ω;
starting T
mb
= 25
°C
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
R
GS
= 20 kΩ
Conditions
Min
-
-
-
-
-
-
-
−55
−55
-
-
-
Max
60
60
±20
75
59
240
166
+175
+175
75
240
211
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
2 of 13
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
120
Pder
(%)
80
03aa16
03ag75
120
Ider
(%)
80
40
40
0
0
50
100
150
200
o
Tmb ( C)
0
0
50
100
150
200
Tmb (ºC)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
03ag66
RDSon = VDS / ID
102
tp = 10 µs
100 µs
1 ms
10
DC
10 ms
100 ms
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse; V
GS
= 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
3 of 13
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
7. Thermal characteristics
Table 4:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
SOT78 package; vertical in still air
Min Typ Max Unit
-
-
-
60
0.9
-
K/W
K/W
thermal resistance from junction to mounting base
Figure 4
thermal resistance from junction to ambient
Symbol Parameter
7.1 Transient thermal impedance
1
Zth(j-mb)
(K/W)
δ
= 0.5
03ag65
0.2
10-1
0.1
0.05
0.02
10-2
single pulse
tp
T
P
δ
=
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
4 of 13
Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
8. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
reverse recovery time
recovered charge
I
S
= 20 A; dI
S
/dt =
−100
A/µs
V
GS
=
−10
V; V
DS
= 30 V
V
DD
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
V
DD
= 44 V; I
D
= 25 A; V
GS
= 10 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
-
-
-
70
10
26
510
290
18
90
84
68
0.85
62
140
-
-
-
645
467
-
-
-
-
1.2
-
-
nC
nC
nC
pF
pF
ns
ns
ns
ns
V
ns
nC
-
-
9
-
12
24
mΩ
mΩ
-
-
-
0.05
-
2
10
500
100
µA
µA
nA
2
1
-
3
-
-
4
-
4.4
V
V
V
60
55
-
-
-
-
V
V
Conditions
Min
Typ
Max
Unit
2230 3093 pF
Source-drain diode
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
5 of 13
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