GMBT5087 datasheet, PDF - EEWORLD Datasheet

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GMBT5087: Descriptionpnp epitaxial planar transistor; File Size198KB，2 Pages; ManufacturerGTM; Websitehttp://www.gtm.com.tw/

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GMBT5087 Overview

pnp epitaxial planar transistor

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ISSUED DATE :2005/06/28

REVISED DATE :

GM BT5087

Description

Package Dimensions

P NP E PITAXI AL P L ANAR T RANS ISTO R

The GMBT5087 is designed for low noise, high gain and general purpose amplifier applications.

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

2.70

3.10

2.40

2.80

1.40

1.60

0.35

0.50

0

0.10

0.45

0.55

REF.

G

H

K

J

L

M

Millimeter

Min.

Max.

1.90 REF.

1.00

1.30

0.10

0.20

0.40

-

0.85

1.15

0C

10 C

Absolute Maximum Ratings at Ta = 25 :

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Symbol

Tj

Tstg

VCBO

VCEO

VEBO

IC

PD

,unless otherwise noted)

Max.

Unit

-

-10

-50

-300

-850

800

-

4.0

MHz

pF

V

nA

mV

I

C

=-100uA , I

E

=0

I

C

=-1mA, I

B

=0

I

E

=-10uA ,I

C

=0

V

CB

=-10V, I

E

=0

V

CB

=-35V, I

E

=0

I

C

=-10mA, I

B

=-1mA

I

C

=-10mA, I

B

=-1mA

V

CE

=-5V, I

C

=-0.1mA

V

CE

=-5V, I

C

=-1mA

V

CE

=-5V, I

C

=-10mA

V

CE

=-5V, I

C

=-0.5mA, f=100MHz

V

CB

=-5V, f=100kHz

* Pulse Test: Pulse Width

380 s, Duty Cycle

2%

Ratings

+150

-55~+150

-50

-3

-50

225

Unit

V

mA

mW

Electrical Characteristics

(Ta = 25 :

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

1

I

CBO

2

*V

CE(sat)

*V

BE(sat)

*h

FE

1

*h

FE

2

*h

FE

3

f

T

Cob

Min.

-50

-3

-

250

40

-

Typ.

-

Test Conditions

1/2

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