2SC5136
Silicon NPN Epitaxial
ADE-208-223
1st. Edition
Application
VHF/UHF wide band amplifier
Features
•
High gain bandwidth product
f
T
= 3.8 GHz typ
•
High gain, low noise figure
PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5136
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Marking is “TI–”.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
25
13
3
50
80
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Symbol
V
(BR)CBO
I
CBO
I
CEO
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
I
EBO
h
FE
Cob
f
T
PG
NF
Min
25
—
—
—
50
—
3.0
7
—
Typ
—
—
—
—
100
0.85
3.8
11
2.5
Max
—
100
10
300
180
1.3
—
—
4.0
pF
GHz
dB
dB
Unit
V
nA
µA
nA
Test conditions
I
C
= 10
µA,
I
E
= 0
V
CB
= 15 V, I
E
= 0
V
CE
= 13 V, R
BE
=
∞
V
EB
= 3 V, I
C
= 0
V
CE
= 4 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 4 V, I
C
= 20 mA
V
CE
= 4 V, I
C
= 20 mA,
f = 900 MHz
V
CE
= 4 V, I
C
= 5 mA,
f = 900 MHz
2
2SC5136
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (mW)
160
200
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
160
120
120
80
80
40
40
0
0.01
V
CE
= 4 V
Pulse Test
0.1
1
10
Collector Current I
C
(mA)
100
0
50
100
150
Ambient Temperature Ta (°C)
200
5
Gain Bandwidth Product f
T
(GHz)
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product vs.
Collector Current
2.0
Collector Output Capacitance vs.
Collector to Base Voltage
I
E
= 0
f = 1 MHz
4
V
CE
= 4V
1.6
3
V
CE
= 1V
2
1.2
0.8
1
0
1
2
5
10
20
Collector Current I
C
(mA)
50
0.4
0
0.1 0.2 0.5 1
2
5
10 20
Collector to Base Voltage V
CB
(V)
3
2SC5136
20
Power Gain vs. Collector Current
f = 900 MHz
Noise Figure NF (dB)
Power Gain PG (dB)
16
8
10
Noise Figure vs. Collector Current
f = 900 MHz
12
V
CE
= 4V
6
V
CE
= 1V
4
8
V
CE
= 1V
4
0
0.1 0.2
2
0
0.1 0.2
V
CE
= 4V
0.5 1 2
5 10 20
Collector Current I
C
(mA)
50
0.5 1 2
5 10 20
Collector Current I
C
(mA)
50
4
2SC5136
S11 Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
0.2
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–.2
–5
–4
–3
–.4
–.6
–.8
–1.5
–2
–120°
–90°
–60°
–1
180°
0°
150°
30°
1
1.5
2
S21 Parameter vs. Frequency
90°
120°
Scale: 5 / div.
60°
–150°
–30°
Condition: V
CE
= 4 V , Zo = 50
Ω
100 to 1000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
Condition: V
CE
= 4 V , Zo = 50
Ω
100 to 1000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
S12 Parameter vs. Frequency
90°
120°
S22 Parameter vs. Frequency
.8
.6
.4
3
1
1.5
2
Scale: 0.02 / div.
60°
150°
30°
.2
4
5
10
180°
0°
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–.2
–150°
–30°
–.4
–120°
–90°
–60°
–.6
–.8
–1.5
–2
–1
–5
–4
–3
Condition: V
CE
= 4 V , Zo = 50
Ω
100 to 1000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
Condition: V
CE
= 4 V , Zo = 50
Ω
100 to 1000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
5
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